Inventor
Robert T. Bondokov
Inventor
Watervliet, NY, US
Overview
Patents· 31 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
Y10TTechnical subjects covered by former us classification17%
H01LSemiconductor devices15%
H10HInorganic light-emitting semiconductor devices having potential barriers9%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light6%
H10DInorganic electric semiconductor devices3%
B28DWorking stone or stone-like materials2%
C01BNon-metallic elements2%
C23CCoating metallic material2%
PatentTitleYear
11,124,892Defect reduction in seeded aluminum nitride crystal growth202111,015,263Defect reduction in seeded aluminum nitride crystal growth202110,954,608UV-transparent aluminum nitride single crystal having a diameter of 35 mm to 150 mm and a predefined UV transparency metric at a wavelength of 265 nm202110,851,474Thermal control for formation and processing of aluminum nitride202010,801,127Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them202010,697,085Defect reduction in seeded aluminum nitride crystal growth202010,612,156Two-stage seeded growth of large aluminum nitride single crystals202010,550,493Thermal control for formation and processing of aluminum nitride202010,407,798Two-stage seeded growth of large aluminum nitride single crystals201910,392,722Defect reduction in seeded aluminum nitride crystal growth201910,316,428Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them201910,125,432Defect reduction in seeded aluminum nitride crystal growth201810,106,913System for growth of large aluminum nitride single crystals with thermal-gradient control20189,970,127Method and apparatus for producing large, single-crystals of aluminum nitride20189,771,666'Defect reduction in seeded aluminum nitride crystal growth'20179,670,591'Defect reduction in seeded aluminum nitride crystal growth'20179,624,601'Defect reduction in seeded aluminum nitride crystal growth'20179,598,791'Large aluminum nitride crystals with reduced defects and methods of making them'20179,580,833'Growth of large aluminum nitride single crystals with thermal-gradient control'20179,447,519'Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them'20169,447,521'Method and apparatus for producing large, single-crystals of aluminum nitride'20169,034,103'Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them'20159,028,612'Growth of large aluminum nitride single crystals with thermal-gradient control'20158,896,020'Method and apparatus for producing large, single-crystals of aluminum nitride'20148,834,630'Defect reduction in seeded aluminum nitride crystal growth'20148,580,035'Large aluminum nitride crystals with reduced defects and methods of making them'20138,545,629'Method and apparatus for producing large, single-crystals of aluminum nitride'20138,349,077'Large aluminum nitride crystals with reduced defects and methods of making them'20138,323,406'Defect reduction in seeded aluminum nitride crystal growth'20128,222,650'Nitride semiconductor heterostructures and related methods'20127,638,346'Nitride semiconductor heterostructures and related methods'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2021Patents assigned to CRYSTAL IS INC (31)· patent assignee history
2009–2021Based in Watervliet, NY, US· patent location history
2012–2021Patents assigned to SCHOWALTER LEO J (19)· patent assignee history
2012–2021Patents assigned to BONDOKOV ROBERT T (18)· patent assignee history
2012–2021Patents assigned to MORGAN KENNETH E (10)· patent assignee history
2012–2021Patents assigned to SLACK GLEN A (10)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CRYSTAL IS INC | 31 | 2009–2021 |
| SCHOWALTER LEO J | 19 | 2012–2021 |
| BONDOKOV ROBERT Tself | 18 | 2012–2021 |
| MORGAN KENNETH E | 10 | 2012–2021 |
| SLACK GLEN A | 10 | 2012–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Watervliet, New York, US | 31 | 2009–2021 |