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Inventor

Tze Wing Poon

Inventor
San Francisco, CA, US

Overview

18→
Patents
2000–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 18 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1023%
C23CCoating metallic material18%
Y10TTechnical subjects covered by former us classification15%
H10DInorganic electric semiconductor devices8%
H01LSemiconductor devices3%
H10BElectronic memory devices3%
H01JElectric discharge tubes or discharge lamps2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
9,530,898'Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof'20168,871,645'Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof'20148,642,128'Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls'20148,198,180'Ion implanted substrate having capping layer and method'20128,198,671'Modification of charge trap silicon nitride with oxygen plasma'20127,858,503'Ion implanted substrate having capping layer and method'20107,560,377'Plasma processes for depositing low dielectric constant films'20097,163,896'Biased H2 etch process in deposition-etch-deposition gap fill'20076,930,061'Plasma processes for depositing low dielectric constant films'20056,869,896'Plasma processes for depositing low dielectric constant films'20056,734,115'Plasma processes for depositing low dielectric constant films'20046,660,656'Plasma processes for depositing low dielectric constant films'20036,596,655'Plasma processes for depositing low dielectric constant films'20036,562,690'Plasma processes for depositing low dielectric constant films'20036,541,282'Plasma processes for depositing low dielectric constant films'20036,348,725'Plasma processes for depositing low dielectric constant films'20026,303,523'Plasma processes for depositing low dielectric constant films'20016,093,966'Semiconductor device with a copper barrier layer and formation thereof'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2016Based in Sunnyvale, CA, US· patent location history
2001–2016Patents assigned to APPLIED MATERIALS INC (16)· patent assignee history
2001–2009Based in San Francisco, CA, US· patent location history
2012–2014Patents assigned to FOAD MAJEED (2)· patent assignee history
2012–2014Patents assigned to GANGULY UDAYAN (2)· patent assignee history
2012–2014Patents assigned to OLSEN CHRISTOPHER SEAN (2)· patent assignee history
2012–2014Patents assigned to POON TZE (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC162001–2016
FOAD MAJEED22012–2014
GANGULY UDAYAN22012–2014
OLSEN CHRISTOPHER SEAN22012–2014
POON TZEself22012–2014
Locations
LocationPatentsSpan
San Francisco, California, US102001–2009
Sunnyvale, California, US82000–2016