LexDanaLexDanabeta
Inventor

Churamani Gaire

Inventor
Clifton Park, NY, US

Overview

3→
Patents
2015–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices30%
H10DInorganic electric semiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
PatentTitleYear
9,882,052'Forming defect-free relaxed SiGe fins'20189,349,864'Methods for selectively forming a layer of increased dopant concentration'20169,147,696'Devices and methods of forming finFETs with self aligned fin formation'2015

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2015–2018Patents assigned to GLOBALFOUNDRIES INC (3)· patent assignee history
2015–2018Based in Clifton Park, NY, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
GLOBALFOUNDRIES INC32015–2018
Locations
LocationPatentsSpan
Clifton Park, New York, US32015–2018