Inventor
Bartlomiej Adam KARDASZ
Inventor
US
Overview
Patents· 9 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores24%
H10NElectric solid-state devices not otherwise provided for24%
H01FMagnets21%
H01LSemiconductor devices16%
H10BElectronic memory devices16%
PatentTitleYear
12,075,706Precessional spin current structure with non-magnetic insertion layer for MRAM202412,069,957Method for manufacturing a magnetic random-access memory device using post pillar formation annealing202411,925,125High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices202411,355,699Precessional spin current structure for MRAM202211,329,217Method for manufacturing a magnetic random-access memory device using post pillar formation annealing202211,329,099Magnetic memory chip having nvm class and SRAM class MRAM elements on the same chip202211,283,010Precessional spin current structure for magnetic random access memory with novel capping materials202211,271,149Precessional spin current structure with nonmagnetic insertion layer for MRAM202211,264,557High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2024Patents assigned to INTEGRATED SILICON SOLUTION CAYMAN INC (9)· patent assignee history
2022–2024Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INTEGRATED SILICON SOLUTION CAYMAN INC | 9 | 2022–2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 9 | 2022–2024 |