Inventor

Bo-Feng Young

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 141 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices25%

H01LSemiconductor devices23%

H10BElectronic memory devices19%

G11CStatic stores10%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%

B82YSpecific uses or applications of nanostructures5%

H10NElectric solid-state devices not otherwise provided for1%

G06FElectric digital data processing1%

PatentTitleYear

12,586,619Integrated circuit device and methods2026 12,588,267Semiconductor device and method of forming the same2026 12,575,107Memory device2026 12,557,293Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same2026 12,506,071Semiconductor memory device and method for manufacturing the same2025 12,505,871Memory cell and method of operating the same2025 12,484,228Semiconductor chip2025 12,477,767Semiconductor device and method2025 12,457,753Back-end-of-line selector for memory device2025 12,426,325Semiconductor device structure with nanostructure2025 12,417,799Memory circuit and write method2025 12,414,305Transistor, memory device and manufacturing method of memory device2025 12,402,377Semiconductor device and method2025 12,396,175Three-dimensional stackable ferroelectric random access memory devices and methods of forming2025 12,382,671Semiconductor structure and manufacturing method for the semiconductor structure2025 12,363,894Method for fabricating three-dimensional memory2025 12,324,146Vertical DRAM structure and method of formation2025 12,317,505Memory array including epitaxial source lines and bit lines2025 12,310,094Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers2025 12,310,056Method of forming semiconductor device2025 12,302,553Vertical DRAM structure and method2025 12,300,735Air gap in inner spacers and methods of fabricating the same in field-effect transistors2025 12,302,557Three-dimensional memory device and method of manufacture2025 12,302,636Three-dimensional memory device2025 12,300,738Semiconductor device and manufacturing method for the semiconductor device2025 12,293,9993D semiconductor package including memory array2025 12,289,892Memory device structure and manufacturing method thereof2025 12,289,893Semiconductor devices including FTJ structure2025 12,284,810Memory device and manufacturing method thereof2025 12,256,550Three-dimensional memory device and method2025 12,245,436Device structure including field effect transistors and ferroelectric capacitors2025 12,238,926Three-dimensional memory device and method2025 12,225,731Memory array contact structures2025 12,211,922Gate air spacer for fin-like field effect transistor2025 12,211,753Semiconductor device2025 12,193,242Multi-level magnetic tunnel junction nor device with wrap-around gate electrodes and methods for forming the same2025 12,193,241Ferroelectric memory device and method of forming the same2025 12,167,606Memory device and method of forming thereof2024 12,154,986Semiconductor device and method2024 12,150,308Semiconductor chip2024 12,150,311Embedded ferroelectric FinFET memory device2024 12,137,571Integrated circuit including three-dimensional memory device2024 12,136,659Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices2024 12,137,569Memory device and method of forming the same2024 12,125,922Nanosheet field-effect transistor device and method of forming2024 12,120,885Ferroelectric tunnel junction memory device using a magnesium oxide tunneling dielectric and methods for forming the same2024 12,114,506Semiconductor structure and method of fabricating the same2024 12,101,939Three-dimensional memory device with ferroelectric material2024 12,089,414Memory device and method of forming the same2024 12,069,865Semiconductor devices and methods of manufacture2024 12,069,864Memory array and methods of forming same2024 12,069,868Gated ferroelectric memory cells for memory cell array and methods of forming the same2024 12,058,870High density 3D FERAM2024 12,058,869Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the same2024 12,051,750Memory array gate structures2024 12,040,006Memory array including dummy regions2024 12,041,786Ferroelectric random access memory device with a three-dimensional ferroelectric capacitor2024 12,040,387Negative-capacitance field effect transistor2024 12,041,783Ferroelectric memory device and method of forming the same2024 12,034,045Semiconductor device structure with nanostructure2024 11,997,855Back-end-of-line selector for memory device2024 11,990,529Air gap in inner spacers and methods of fabricating the same in field-effect transistors2024 11,991,886Three-dimensional stackable ferroelectric random access memory devices and methods of forming2024 11,974,441Memory array including epitaxial source lines and bit lines2024 11,950,427Ferroelectric memory device and method of forming the same2024 11,943,933Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same2024 11,923,252Semiconductor device and method for manufacturing the same2024 11,915,787Integrated circuit device and methods2024 11,910,617Ferroelectric memory device and method of forming the same2024 11,910,615Memory device and manufacturing method thereof2024 11,901,411Semiconductor device and method2024 11,903,189Three-dimensional memory and fabricating method thereof2024 11,901,450Ferroelectric structure for semiconductor devices2024 11,864,392Multi-level magnetic tunnel junction NOR device with wrap-around gate electrodes and methods for forming the same2024 11,862,219Memory cell and method of operating the same2024 11,854,825Gate structure of semiconductor device and method for forming the same2023 11,856,785Memory array and methods of forming same2023 11,856,786Integrated circuit including three-dimensional memory device2023 11,855,205Semiconductor device with negative capacitance structure2023 11,848,370Semiconductor device and manufacturing method for the semiconductor device2023 11,837,660Semiconductor device and method2023 11,832,450Embedded ferroelectric FinFET memory device2023 11,817,489Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices2023 11,805,657Ferroelectric tunnel junction memory device using a magnesium oxide tunneling dielectric and methods for forming the same2023 11,799,030Semiconductor devices with embedded ferroelectric field effect transistors2023 11,791,421Nanosheet field-effect transistor device and method of forming2023 11,791,393Semiconductor device and method of forming the same2023 11,784,242Semiconductor device and method2023 11,777,031Semiconductor structure and manufacturing method for the semiconductor structure2023 11,770,934Semiconductor structure and method of fabricating the same2023 11,765,892Three-dimensional memory device and method of manufacture2023 11,764,281Gate air spacer for fin-like field effect transistor2023 11,764,292Negative-capacitance field effect transistor2023 11,758,736Ferroelectric random access memory devices and methods2023 11,729,994Structures for testing nanoscale devices including ferroelectric capacitors and methods for forming the same2023 11,729,986Ferroelectric memory device and method of forming the same2023 11,716,856Three-dimensional memory device and method2023 11,705,519Semiconductor device and manufacturing method thereof2023 11,695,073Memory array gate structures2023 11,664,420Semiconductor device and method2023 11,653,500Memory array contact structures2023 11,631,748Structure and formation method of semiconductor device structure with gate stack2023 11,631,698Three-dimensional memory device with ferroelectric material2023 11,626,504Fin field effect transistor (FinFET) device structure2023 11,588,018Semiconductor device structure with nanostructure and method for forming the same2023 11,587,950Memory device and method of forming the same2023 11,581,336Semiconductor memory structure and device2023 11,574,928Semiconductor memory structure and method for forming the same2023 11,568,912Memory cell and method of operating the same2023 11,569,250Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same2023 11,552,103Three-dimensional stackable ferroelectric random access memory devices and methods of forming2023 11,545,500Three-dimensional memory device and method2023 11,532,343Memory array including dummy regions2022 11,515,313Gated ferroelectric memory cells for memory cell array and methods of forming the same2022 11,515,332Ferroelectric memory device and method of forming the same2022 11,508,753Embedded ferroelectric FinFET memory device2022 11,502,183Air gap in inner spacers and methods of fabricating the same in field-effect transistors2022 11,488,659Memory circuit and write method2022 11,476,166Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers2022 11,469,324Semiconductor device with negative capacitance structure and method for forming the same2022 11,450,362Memory device, integrated circuit device and method2022 11,450,676Ferroelectric random access memory device with a three-dimensional ferroelectric capacitor2022 11,450,686High density 3D FERAM2022 11,444,202Semiconductor device and method of forming the same2022 11,444,0693D semiconductor package including memory array2022 11,417,750Gate air spacer for fin-like field effect transistor2022 11,404,570Semiconductor devices with embedded ferroelectric field effect transistors2022 11,404,444Three-dimensional memory device and methods of forming2022 11,387,351Semiconductor device and method2022 11,362,108Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the same2022 11,355,551Multi-level magnetic tunnel junction NOR device with wrap-around gate electrodes and methods for forming the same2022 11,322,505Ferroelectric random access memory devices and methods2022 11,309,398Semiconductor device and manufacturing method for the semiconductor device2022 11,309,189Fin field effect transistor (FinFET) device structure and method for forming the same2022 11,289,603Semiconductor device and method2022 11,282,945Negative-capacitance field effect transistor2022 11,257,950Semiconductor structure and manufacturing method for the semiconductor structure2022 11,233,130Semiconductor device and method of forming the same2022 11,227,956Nanosheet field-effect transistor device and method of forming2022 11,217,494Semiconductor devices and methods of manufacture2022 11,183,504Structures for testing nanoscale devices including ferroelectric capacitors and methods for forming the same2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (141)· patent assignee history

2021–2026Based in TW· patent location history

2024Patents assigned to TAIWAN SEMICONDUTOR MFG CO LTD (1)· patent assignee history

2025Patents assigned to NATIONAL YANG MING CHIAO TUNG UNIV (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	141	2021–2026
NATIONAL YANG MING CHIAO TUNG UNIV	1	2025
TAIWAN SEMICONDUTOR MFG CO LTD	1	2024

Locations

Location	Patents	Span
TW	141	2021–2026