Inventor
Noriyuki Homma
Inventor
Kodaira, JP
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores35%
H10BElectronic memory devices23%
H10DInorganic electric semiconductor devices19%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
G05FSystems for regulating electric or magnetic variables2%
H03KPulse technique2%
PatentTitleYear
7,123,534'Semiconductor memory device having short refresh time'20066,864,559'Semiconductor memory device'20056,740,958'Semiconductor memory device'20046,208,010'Semiconductor memory device'20015,497,023'Semiconductor memory device having separately biased wells for isolation'19965,448,527'Decoder and driver for use in a semiconductor memory'19955,398,201'Bit-line drive circuit for a semiconductor memory'19955,386,135'Semiconductor CMOS memory device with separately biased wells'19955,324,982'Semiconductor memory device having bipolar transistor and structure to avoid soft error'19945,255,225'Semiconductor integrated circuit device and memory consisting of semiconductor integrated circuit'19935,163,022'Semiconductor cell memory with current sensing'19925,148,255'Semiconductor memory device'19925,086,414'Semiconductor device having latch means'19924,986,666'Semiconductor memory device'19914,958,320'Radiation resistant bipolar memory'19904,942,555'Bi-MOS semiconductor memory having high soft error immunity'19904,937,480'BICMOS buffer circuit'19904,928,265'Semiconductor integrated circuit'19904,905,078'Semiconductor device'19904,866,673'BI-MOS semiconductor memory having high soft error immunity'19894,858,191'Semiconductor integrated circuit'19894,858,184'Radiation resistant bipolar memory'19894,829,361'Semiconductor device'19894,812,894'Semiconductor device'19894,636,833'Semiconductor device'19874,461,992'Temperature-compensated current source circuit and a reference voltage generating circuit using the same'19844,366,558'Memory device with fast word-line-discharging-circuits'19824,164,791'Semiconductor memory with equal word line and reference line voltage drop'19794,156,941'High speed semiconductor memory'1979Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1979–2001Patents assigned to HITACHI LTD (26)· patent assignee history
1979–1989Based in Kokubunji, JP· patent location history
1989–2006Based in Kodaira, JP· patent location history
1989–1994Based in Tokyo, JP· patent location history
1991–1995Patents assigned to HITACHI DEVICE ENG (6)· patent assignee history
2004–2006Patents assigned to RENESAS TECH CORP (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI LTD | 26 | 1979–2001 |
| HITACHI DEVICE ENG | 6 | 1991–1995 |
| RENESAS TECH CORP | 3 | 2004–2006 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kodaira, JP | 20 | 1989–2006 |
| Kokubunji, JP | 6 | 1979–1989 |
| Tokyo, JP | 3 | 1989–1994 |