LexDanaLexDanabeta
Inventor

Xuguang Wang

Inventor
Eden Prairie, MN, US

Overview

29→
Patents
1989–2017
Patent span
Physics
Primary field (CPC G)

Patents· 29 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores52%
H10BElectronic memory devices9%
H10NElectric solid-state devices not otherwise provided for9%
G01MTesting static or dynamic balance of machines or structures7%
B25JManipulators5%
G01NInvestigating or analysing materials by determining their chemical or physical properties5%
G05BControl or regulating systems in general5%
H01LSemiconductor devices2%
H10DInorganic electric semiconductor devices2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
PatentTitleYear
9,666,300'Three-dimensional one-time-programmable memory comprising off-die address/data-translator'20178,766,230'Non-volatile multi-bit memory with programmable capacitance'20148,757,002'Gasbag type pavement accelerated loading testing apparatus'20148,714,001'Floating mechanism loading vehicle provided with double shafts and eight wheels for pavement accelerated loading test'20148,559,255'Controlling AC disturbance while programming'20138,482,957'Three dimensionally stacked non volatile memory units'20138,482,971'Diode assisted switching spin-transfer torque memory unit'20138,264,898'Controlling AC disturbance while programming'20128,213,216'Shared bit line and source line resistive sense memory structure'20128,199,569'Diode assisted switching spin-transfer torque memory unit'20128,098,516'Static source plane in STRAM'20128,068,359'Static source plane in stram'20118,054,673'Three dimensionally stacked non volatile memory units'20117,986,562'Controlling AC disturbance while programming'20117,977,722'Non-volatile memory with programmable capacitance'20117,944,742'Diode assisted switching spin-transfer torque memory unit'20117,940,548'Shared bit line and source line resistive sense memory structure'20117,859,891'Static source plane in stram'20107,804,709'Diode assisted switching spin-transfer torque memory unit'20107,786,463'Non-volatile multi-bit memory with programmable capacitance'20107,679,967'Controlling AC disturbance while programming'20107,671,405'Deep bitline implant to avoid program disturb'20107,626,869'Multi-phase wordline erasing for flash memory'20097,561,471'Cycling improvement using higher erase bias'20097,319,615'Ramp gate erase for dual bit flash memory'20086,854,318'Method and apparatus of nondestructive testing a sealed product for leaks'20056,584,828'Method and apparatus of nondestructive testing a sealed product for leaks'20035,297,238'Robot end-effector terminal control frame (TCF) calibration method and device'19944,831,549'Device and method for correction of robot inaccuracy'1989

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2005Based in Indianapolis, IN, US· patent location history
2008–2013Patents assigned to SPANSION LLC (8)· patent assignee history
2008–2010Based in Sunnyvale, CA, US· patent location history
2010–2014Patents assigned to SEAGATE TECHNOLOGY LLC (14)· patent assignee history
2010–2013Based in Eden Prairie, MN, US· patent location history
2010–2014Based in Maple Grove, MN, US· patent location history
2011–2014Patents assigned to WANG XUGUANG (9)· patent assignee history
2011–2013Patents assigned to LIU HONGYUE (6)· patent assignee history
2011–2013Patents assigned to CHEN YIRAN (4)· patent assignee history
2014Based in Jinan, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEAGATE TECHNOLOGY LLC142010–2014
WANG XUGUANGself92011–2014
SPANSION LLC82008–2013
LIU HONGYUE62011–2013
CHEN YIRAN42011–2013
Locations
LocationPatentsSpan
Eden Prairie, Minnesota, US142010–2013
Sunnyvale, California, US52008–2010
Maple Grove, Minnesota, US32010–2014
Jinan, CN22014
Indianapolis, IN, US22003–2005