LexDanaLexDanabeta
Inventor

Motonobu Takeya

Inventor
Ansan-si, KR

Overview

47→
Patents
2003–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 47 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers21%
H01LSemiconductor devices13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light11%
B82YSpecific uses or applications of nanostructures8%
H10DInorganic electric semiconductor devices6%
C30BSingle-crystal growth3%
G09FDisplaying3%
G09GArrangements or circuits for control of indicating devices using static means to present variable information3%
PatentTitleYear
11,063,175Display device, substrate for display device and method for repairing display device202111,050,008Display apparatus and method of manufacturing the same202111,043,476Displaying apparatus having light emitting device, method of manufacturing the same and method of transferring light emitting device202111,024,786Display apparatus and manufacturing method thereof202111,024,784Display apparatus and manufacturing method thereof202111,018,285Display device and manufacturing method thereof202110,937,768Method of manufacturing display device202110,833,057Display apparatus and manufacturing method thereof202010,797,027Displaying apparatus having light emitting device, method of manufacturing the same and method of transferring light emitting device202010,775,667Display apparatus202010,606,121Display apparatus202010,497,845Display apparatus and method of manufacturing the same201910,332,949Display apparatus201910,312,225Display apparatus and manufacturing method thereof201910,096,647Display apparatus having a plurality of reflective electrodes201810,068,884Display apparatus and manufacturing method thereof201810,050,026Display apparatus20189,997,688Display apparatus and manufacturing method thereof20189,997,669High power light emitting device and method of making the same20189,978,727Display apparatus and manufacturing method thereof20189,887,184'Display apparatus and manufacturing method thereof'20189,263,567'Nitride high electron mobility transistor having a channel forming stack'20169,219,137'Vertical gallium nitride transistors and methods of fabricating the same'20159,142,688'Gallium nitride-based diode and method of fabricating the same'20158,513,683'Optical integrated semiconductor light emitting device'20138,460,958'Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method'20137,964,419'Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method'20117,729,400'External cavity type semiconductor laser'20107,561,606'Semiconductor laser, method of mounting semiconductor laser, semiconductor laser mounted structure, and optical disk system'20097,439,546'Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method'20087,339,195'Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method'20087,282,379'Nitride semiconductor, semiconductor device, and method of manufacturing the same'20077,125,732'Semiconductor light emitting device and its manufacturing method'20067,026,179'Method of manufacturing a semiconductor light emitting device utilizing a nitride III-V compound semiconductor substrate'20066,995,406'Multibeam semiconductor laser, semiconductor light-emitting device and semiconductor device'20066,991,952'Method of manufacturing semiconductor device'20066,972,206'Nitride semiconductor, semiconductor device, and method of manufacturing the same'20056,939,730'Nitride semiconductor, semiconductor device, and method of manufacturing the same'20056,890,785'Nitride semiconductor, semiconductor device, and manufacturing methods for the same'20056,870,193'Semiconductor light emitting device and its manufacturing method'20056,861,340'Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device'20056,836,498'Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof'20046,829,270'Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor device'20046,797,595'Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device'20046,524,882'Method of producing p-type nitride based III-V compound semiconductor and method of fabricating semiconductor device using the same'20036,524,976'Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device'20036,509,579'Semiconductor device'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2013Patents assigned to SONY CORP (22)· patent assignee history
2003–2013Based in Miyagi, JP· patent location history
2006–2013Patents assigned to TAKEYA MOTONOBU (3)· patent assignee history
2006–2013Patents assigned to FUJIMOTO TSUYOSHI (2)· patent assignee history
2006–2013Patents assigned to GOTO OSAMU (2)· patent assignee history
2006–2011Based in Tokyo, JP· patent location history
2015–2021Patents assigned to SEOUL SEMICONDUCTOR CO LTD (24)· patent assignee history
2015–2021Based in Ansan-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEOUL SEMICONDUCTOR CO LTD242015–2021
SONY CORP222003–2013
TAKEYA MOTONOBUself32006–2013
FUJIMOTO TSUYOSHI22006–2013
GOTO OSAMU22006–2013
Locations
LocationPatentsSpan
Ansan-si, KR242015–2021
Miyagi, JP212003–2013
Tokyo, JP22006–2011