Inventor

MAO-LIN HUANG

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 74 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices30%

H01LSemiconductor devices28%

B82YSpecific uses or applications of nanostructures20%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%

H10BElectronic memory devices1%

H04LTransmission of digital information, e.g. telegraphic communication0%

H04QSelecting0%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests0%

PatentTitleYear

12,557,371Semiconductor structure and method for manufacturing the same2026 12,513,953Tuning threshold voltage in nanosheet transitor devices2025 12,507,474Input/output semiconductor devices2025 12,477,766Semiconductor transistor device structure including nanostructure and gate structure with protection layer and fill layer and method for forming the same2025 12,451,359Fluorine incorporation method for nanosheet2025 12,419,073Device having a gate electrode wrapping around semiconductor layers and proximate to a dielectric fin2025 12,396,248Semiconductor device fabrication methods and structures thereof2025 12,389,675Semiconductor device having nanosheet transistor and methods of fabrication thereof2025 12,324,219Integrated circuit including dipole incorporation for threshold voltage tuning in transistors2025 12,315,731Integrated circuit with nanosheet transistors with metal gate passivation2025 12,288,695Method of forming a transistor device having dipole-containing gate dielectric layer and fluorine-containing gate dielectric layer2025 12,266,654FinFET devices and methods of forming the same2025 12,237,372Field effect transistor and method2025 12,237,396P-metal gate first gate replacement process for multigate devices2025 12,237,373Field effect transistor and method2025 12,206,005Semiconductor structures and methods thereof2025 12,199,190Silicon channel tempering2025 12,191,209Semiconductor device2025 12,176,391Semiconductor device structure having an isolation layer to isolate a conductive feature and a gate electrode layer2024 12,170,231Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the same2024 12,166,100Nanosheet device with dipole dielectric layer and methods of forming the same2024 12,148,750Work function design to increase density of nanosheet devices2024 12,119,391Fin-based semiconductor device structure including self-aligned contacts and method for forming the same2024 12,119,266Semiconductor arrangement and method of manufacture2024 12,107,131Gate-all-around devices having self-aligned capping between channel and backside power rail2024 12,087,772Nanosheet device architecture for cell-height scaling2024 12,087,771Multiple patterning gate scheme for nanosheet rule scaling2024 12,068,393Etching back and selective deposition of metal gate2024 12,062,693Semiconductor device structure and methods of forming the same2024 12,040,191Semiconductor structures and methods thereof2024 12,034,006Input/output semiconductor devices2024 12,021,132Gate patterning process for multi-gate devices2024 11,996,334Semiconductor device fabrication methods and structures thereof2024 11,961,840Semiconductor device having nanosheet transistor and methods of fabrication thereof2024 11,948,987Self-aligned backside source contact structure2024 11,942,377Gate structure and patterning method2024 11,915,937Fluorine incorporation method for nanosheet2024 11,901,361Semiconductor structure and method for forming the same2024 11,894,460Semiconductor device having nanosheet transistor and methods of fabrication thereof2024 11,894,367Integrated circuit including dipole incorporation for threshold voltage tuning in transistors2024 11,869,955Integrated circuit with nanosheet transistors with robust gate oxide2024 11,862,700Semiconductor device structure including forksheet transistors and methods of forming the same2024 11,862,633Work function design to increase density of nanosheet devices2024 11,848,368Transistors with different threshold voltages2023 11,830,924Nanosheet device with dipole dielectric layer and methods of forming the same2023 11,791,218Dipole patterning for CMOS devices2023 11,756,995Method of forming a semiconductor device structure having an isolation layer to isolate a conductive feature and a gate electrode layer2023 11,728,401Semiconductor structures and methods thereof2023 11,710,667Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the same2023 11,676,866Semiconductor arrangement and method of manufacture2023 11,670,723Silicon channel tempering2023 11,670,692Gate-all-around devices having self-aligned capping between channel and backside power rail2023 11,658,837Multicast packet replication method2023 11,637,195Metal gate patterning process including dielectric Fin formation2023 11,626,327Methods of fabricating semiconductor devices with mixed threshold voltages boundary isolation of multiple gates and structures formed thereby2023 11,626,485Field effect transistor and method2023 11,615,962Semiconductor structures and methods thereof2023 11,600,533Semiconductor device fabrication methods and structures thereof2023 11,594,614P-metal gate first gate replacement process for multigate devices2023 11,563,109Semiconductor device structure and method for forming the same2023 11,502,168Tuning threshold voltage in nanosheet transitor devices2022 11,450,664Semiconductor device having nanosheet transistor and methods of fabrication thereof2022 11,417,653Semiconductor structure and method for forming the same2022 11,387,346Gate patterning process for multi-gate devices2022 11,380,774Etching back and selective deposition of metal gate2022 11,374,105Nanosheet device with dipole dielectric layer and methods of forming the same2022 11,264,288Gate structure and patterning method2022 11,257,815Work function design to increase density of nanosheet devices2022 11,244,871Methods of fabricating semiconductor devices for tightening spacing between nanosheets in GAA structures and structures formed thereby2022 11,245,033Semiconductor devices with core-shell structures2022 11,205,650Input/output semiconductor devices2021 11,201,094Forming metal gates with multiple threshold voltages2021 11,152,477Transistors with different threshold voltages2021 11,145,734Semiconductor device with dummy fin and liner and method of forming the same2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (73)· patent assignee history

2021–2026Based in TW· patent location history

2023Patents assigned to REALTEK SEMICONDUCTOR CORP (1)· patent assignee history

2025Patents assigned to TAIWAN SEMICONDICTOR MFG COMPANY LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	73	2021–2026
REALTEK SEMICONDUCTOR CORP	1	2023
TAIWAN SEMICONDICTOR MFG COMPANY LTD	1	2025

Locations

Location	Patents	Span
TW	74	2021–2026