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Inventor

ENGE WANG

Inventor
CN

Overview

3→
Patents
2025
Patent span
Chemistry
Primary field (CPC C)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth38%
C22FChanging the physical structure of non-ferrous metals and non-ferrous alloys25%
B21BRolling of metal13%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form13%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution13%
PatentTitleYear
12,509,792Purification method for copper foil202512,203,193Preparation method for ultrahigh-conductivity multilayer single-crystal laminated copper material, and copper material202512,188,150Method for clonal-growth of single-crystal metal2025

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2025Patents assigned to UNIV BEIJING (2)· patent assignee history
2025Patents assigned to SONGSHAN LAKE MAT LAB (1)· patent assignee history
2025Patents assigned to ZHONGKE CRYSTAL MAT DONGGUAN CO LIMITED (1)· patent assignee history
2025Based in CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
UNIV BEIJING22025
SONGSHAN LAKE MAT LAB12025
ZHONGKE CRYSTAL MAT DONGGUAN CO LIMITED12025
Locations
LocationPatentsSpan
CN32025