Inventor
HSIU-HAO TSAO
Inventor
TW
Overview
Patents· 13 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices33%
H01LSemiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1028%
B82YSpecific uses or applications of nanostructures10%
PatentTitleYear
12,557,319Semiconductor device structure and methods of forming the same202612,444,608Structure having gate spacers with projecting portions extending into a gate dielectric202512,198,988Gate formation of semiconductor devices202512,068,398Fin field-effect transistor with void and method of forming the same202412,033,895Semiconductor devices and methods of manufacturing thereof202411,996,468Multi-gate device fabrication and structures thereof202411,961,919Nanostructure field-effect transistor device and method of forming202411,735,651FinFET device and method202311,664,444Fin field-effect transistor with void and method of forming the same202311,574,846Gate formation of semiconductor devices202311,437,498FinFET device and method202211,398,384Methods for manufacturing a transistor gate by non-directional implantation of impurities in a gate spacer202211,282,967Nanostructure field-effect transistor device and method of forming2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (13)· patent assignee history
2022–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 13 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 13 | 2022–2026 |