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Inventor

Toshiya Uemura

Inventor
Aichi, JP

Overview

68→
Patents
1991–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 68 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers44%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
H10DInorganic electric semiconductor devices9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light3%
B60RVehicles, vehicle fittings, or vehicle parts, not otherwise provided for2%
C23CCoating metallic material2%
C25DProcesses for the electrolytic or electrophoretic production of coatings2%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form2%
B82YSpecific uses or applications of nanostructures2%
PatentTitleYear
9,368,687'Group-III nitride semiconductor light-emitting element and manufacturing method therefor'20168,853,720'Group III nitride semiconductor light-emitting device and method for producing the same'20148,471,288'Group III nitride semiconductor light-emitting device including an auxiliary electrode in contact with a back surface of an n-type layer'20138,389,304'Method for producing group III nitride semiconductor light-emitting device'20138,324,083'Method for producing group III nitride compound semiconductor element'20128,138,506'Group III nitride-based compound semiconductor light-emitting device'20127,989,836'Light emitting element having an irregular surface, light emitting device using the light emitting element, and method for manufacturing light emitting element'2011D0631017'Light emitting diode chip'2011D0631018'Light emitting diode chip'20117,781,241'Group III-V semiconductor device and method for producing the same'20107,754,514'Method of making a light emitting element'20107,687,817'Group III nitride compound semiconductor light emitting element, light emitting device using the light emitting element: and method for manufacturing the light emitting element'20107,646,036'Electrode and Group III nitride-based compound semiconductor light-emitting device having the electrode'20107,576,363'Group III nitride compound semiconductor light emitting device'20097,541,262'Method for producing semiconductor device'20097,304,325'Group III nitride compound semiconductor light-emitting device'20077,291,868'Light-emitting semiconductor device and a method of manufacturing it'20077,176,623'Light emitting device'20077,157,294'Group III nitride compound semiconductor light-emitting element'20077,138,662'Light-emitting device'20067,109,529'Light-emitting semiconductor device using group III nitride compound'20067,101,780'Method for manufacturing Group-III nitride compound semiconductor device'20067,096,873'Method for manufacturing a group III nitride compound semiconductor device'20067,095,059'Group III nitride compound semiconductor device'20067,078,252'Method of making group III nitride compound semiconductor light emitting element'20067,071,495'III group nitride system compound semiconductor light emitting element and method of making same'20067,042,089'Group III nitride compound semiconductor device'20067,042,153'Group III nitride compound semiconductor light emitting element'20067,038,246'Light emitting apparatus'20067,023,020'Group III nitride compound semiconductor light-emitting device'20067,018,915'Group III nitride compound semiconductor device and method for forming an electrode'20067,015,515'Group III nitride compound semiconductor device having a superlattice structure'20067,005,684'Group III nitride based semiconductor luminescent element'20066,960,485'Light-emitting device using a group III nitride compound semiconductor and a method of manufacture'20056,955,936'Methods and devices related to electrode pads for p-type Group III nitride compound semiconductors'20056,956,245'Group III nitride compound semiconductor light-emitting element'20056,936,859'Light-emitting semiconductor device using group III nitride compound'20056,917,059'III group nitride system compound semiconductor light emitting element'20056,878,971'Light-emitting apparatus'20056,867,058'Transparent electrode film and group III nitride semiconductor device'20056,861,281'Group III nitride compound semiconductor light-emitting device and method for producing the same'20056,835,958'Light-emitting device'20046,831,305'Semiconductor light-emitting device'20046,806,571'III nitride compound semiconductor element an electrode forming method'20046,794,690'Group III nitride compound semiconductor light-emitting element'20046,777,805'Group-III nitride compound semiconductor device'20046,774,025'Method for producing group III nitride compound semiconductor light-emitting element'20046,734,468'Devices related to electrode pads for p-type group III nitride compound semiconductors'20046,727,518'Light emitting device using group III nitride compound semiconductor'20046,649,941'Method for manufacturing semiconductor device using group III nitride compound'20036,573,117'GaN related compound semiconductor and process for producing the same'20036,570,186'Light emitting device using group III nitride compound semiconductor'20036,521,999'Transparent electrode film and group III nitride semiconductor device'20036,500,689'Process for producing GaN related compound semiconductor'20026,335,212'Method of fabricating a semiconductor light-emitting element'20026,331,450'Method of manufacturing semiconductor device using group III nitride compound'20016,310,364'Light-emitting apparatus'20016,291,840'GaN related compound semiconductor light-emitting device'20016,121,127'Methods and devices related to electrodes for p-type group III nitride compound semiconductors'20006,103,543'Fabrication of device electrodes in gan and related materials'20006,033,927'Method for separating a substrate of a group III nitride semiconductor light-emitting device'20006,008,539'Electrodes for p-type group III nitride compound semiconductors'19995,803,131'Fuel filler pipe'19985,484,516'Resin products and process for producing the same'19965,480,714'Chipping-resistant resin molded article'19965,441,626'Partially plated resin products and partial plating process therefor'19955,073,011'Electrochromic device with a reference electrochromic element'19915,054,895'Electrochromic element'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–2016Patents assigned to TOYODA GOSEI KK (68)· patent assignee history
1991Based in Nagoya, JP· patent location history
1995–2014Based in Aichi, JP· patent location history
1998–2005Based in Tsushima, JP· patent location history
2004–2007Based in Nishikasugai-gun, JP· patent location history
2012–2014Patents assigned to UEMURA TOSHIYA (5)· patent assignee history
2012–2014Patents assigned to ARAZOE NAOKI (3)· patent assignee history
2012Patents assigned to ANDO MASANOBU (1)· patent assignee history
2012–2016Based in Kiyosu, JP· patent location history
2013Patents assigned to ITO JUN (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOYODA GOSEI KK681991–2016
UEMURA TOSHIYAself52012–2014
ARAZOE NAOKI32012–2014
ITO JUN22013
ANDO MASANOBU12012
Locations
LocationPatentsSpan
Aichi, JP471995–2014
Nishikasugai-gun, JP92004–2007
Tsushima, JP51998–2005
Kiyosu, JP42012–2016
Nagoya, JP21991