LexDanaLexDanabeta
Inventor

Richard J. Brown

Inventor
Los Gatos, CA, US

Overview

56→
Patents
1977–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 56 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices35%
H01LSemiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
F16DCouplings for transmitting rotation6%
Y10TTechnical subjects covered by former us classification3%
F16BDevices for fastening or securing constructional elements or machine parts together, e.g. nails, bolts, circlips, clamps, clips or wedges2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
A61MDevices for introducing media into, or onto, the body1%
B04BCentrifuges1%
B23PMetal-working not otherwise provided for1%
PatentTitleYear
9,484,470'Method of fabricating a GaN P-i-N diode using implantation'20169,450,112'GaN-based Schottky barrier diode with algan surface layer'20169,330,918'Edge termination by ion implantation in gallium nitride'20169,324,844'Method and system for a GaN vertical JFET utilizing a regrown channel'20169,318,331'Method and system for diffusion and implantation in gallium nitride based devices'20169,318,619'Vertical gallium nitride JFET with gate and source electrodes on regrown gate'20169,287,389'Method and system for doping control in gallium nitride based devices'20169,269,793'Method and system for a gallium nitride self-aligned vertical MESFET'20169,224,828'Method and system for floating guard rings in gallium nitride materials'20159,196,679'Schottky diode with buried layer in GaN materials'20159,184,305'Method and system for a GAN vertical JFET utilizing a regrown gate'20159,171,751'Method and system for fabricating floating guard rings in GaN materials'20159,171,937'Monolithically integrated vertical JFET and Schottky diode'20159,171,923'Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode'20159,171,900'Method of fabricating a gallium nitride P-i-N diode using implantation'20159,159,784'Aluminum gallium nitride etch stop layer for gallium nitride based devices'20159,136,116'Method and system for formation of P-N junctions in gallium nitride based electronics'20159,117,850'Method and system for a gallium nitride vertical JFET with self-aligned source and gate'20159,093,284'Aluminum gallium nitride etch stop layer for gallium nitride based devices'20159,093,395'Method and system for local control of defect density in gallium nitride based electronics'20158,969,912'Method and system for a GaN vertical JFET utilizing a regrown channel'20158,969,180'Method and system for junction termination in GaN materials using conductivity modulation'20158,946,725'Vertical gallium nitride JFET with gate and source electrodes on regrown gate'20158,946,788'Method and system for doping control in gallium nitride based devices'20158,941,117'Monolithically integrated vertical JFET and Schottky diode'20158,933,532'Schottky diode with buried layer in GaN materials'20158,927,999'Edge termination by ion implantation in GaN'20158,866,147'Method and system for a GaN self-aligned vertical MESFET'20148,853,063'Method and system for carbon doping control in gallium nitride based devices'20148,846,482'Method and system for diffusion and implantation in gallium nitride based devices'20148,841,708'Method and system for a GAN vertical JFET with self-aligned source metallization'20148,836,071'Gallium nitride-based schottky barrier diode with aluminum gallium nitride surface layer'20148,829,574'Method and system for a GaN vertical JFET with self-aligned source and gate'20148,822,311'Method of fabricating a GaN P-i-N diode using implantation'20148,778,788'Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode'20148,749,015'Method and system for fabricating floating guard rings in GaN materials'20148,716,078'Method and system for a gallium nitride vertical JFET with self-aligned gate metallization'20148,716,716'Method and system for junction termination in GaN materials using conductivity modulation'20148,698,164'Vertical GaN JFET with gate source electrodes on regrown gate'20148,643,134'GaN-based Schottky barrier diode with field plate'20148,592,938'GaN-based Schottky barrier diode with field plate'20138,592,298'Fabrication of floating guard rings using selective regrowth'20138,569,153'Method and system for carbon doping control in gallium nitride based devices'20138,558,242'Vertical GaN-based metal insulator semiconductor FET'20138,502,234'Monolithically integrated vertical JFET and Schottky diode'2013D0573508'Automobile body'20086,056,098'Viscous fluid coupling and improved valve assembly therefor'20005,511,643'Viscous fluid coupling and improved fluxring for use therein'19965,152,384'Viscous fluid coupling and remote control assembly therefor'19925,076,911'Centrifugation chamber having an interface detection surface'19914,974,712'Fluid coupling device and improved valving therefor'19904,828,467'Supercharger and rotor and shaft arrangement therefor'19894,735,300'Fluid coupling device, bimetal coil and clip assembly thereof'19884,544,054'Mounting shaft and adaptor for viscous coupling'19854,326,137'Low-drag electrical contact arrangement for maintaining continuity between horizontally movable members'19824,013,154'Mounting nut retention for fluid couplings'1977

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1977–2000Based in Marshall, MI, US· patent location history
1982Based in Clinton, TN, US· patent location history
1991Based in Northbrook, IL, US· patent location history
2008Based in Eastlake, OH, US· patent location history
2013–2016Patents assigned to AVOGY INC (44)· patent assignee history
2013–2015Patents assigned to BROWN RICHARD J (25)· patent assignee history
2013–2015Patents assigned to NIE HUI (25)· patent assignee history
2013–2015Patents assigned to KIZILYALLI ISIK C (22)· patent assignee history
2013–2015Patents assigned to ROMANO LINDA (19)· patent assignee history
2013–2016Based in Los Gatos, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
AVOGY INC442013–2016
BROWN RICHARD Jself252013–2015
NIE HUI252013–2015
KIZILYALLI ISIK C222013–2015
ROMANO LINDA192013–2015
Locations
LocationPatentsSpan
Los Gatos, California, US452013–2016
Marshall, MI, US81977–2000
Eastlake, OH, US12008
Northbrook, Illinois, US11991
Clinton, TN, US11982