Inventor
Darren B. Thomson
Inventor
Cary, NC, US
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1040%
C30BSingle-crystal growth20%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light16%
H10DInorganic electric semiconductor devices16%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light4%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
PatentTitleYear
7,855,108'Semiconductor heterojunction devices based on SiC'20107,683,400'Semiconductor heterojunction devices based on SiC'20107,525,099'Nuclear radiation detection system'20097,378,684'Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates'20087,371,282'Solid solution wide bandgap semiconductor materials'20087,217,947'Semiconductor light source and method of making'20077,195,993'Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches'20076,897,483'Second gallium nitride layers that extend into trenches in first gallium nitride layers'20056,602,764'Methods of fabricating gallium nitride microelectronic layers on silicon layers'20036,489,221'High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates'20026,462,355'Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates'20026,376,339'PENDEOEPITAXIAL METHODS OF FABRICATING GALLIUM NITRIDE SEMICONDUCTOR LAYERS ON SILICON CARBIDE SUBSTRATES BY LATERAL GROWTH FROM SIDEWALLS OF MASKED POSTS, AND GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES FABRICATED THEREBY'20026,265,289'Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby'20016,255,198'Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby'20016,177,688'Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2008Patents assigned to UNIV NORTH CAROLINA STATE (10)· patent assignee history
2001–2008Based in Cary, NC, US· patent location history
2007–2008Patents assigned to NORTHROP GRUMMAN CORP (2)· patent assignee history
2007–2010Based in Ellicott City, MD, US· patent location history
2009–2010Patents assigned to NORTHROP GRUMMAN SYSTEMS CORP (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV NORTH CAROLINA STATE | 10 | 2001–2008 |
| NORTHROP GRUMMAN SYSTEMS CORP | 3 | 2009–2010 |
| NORTHROP GRUMMAN CORP | 2 | 2007–2008 |
Locations
| Location | Patents | Span |
|---|---|---|
| Cary, NC, US | 10 | 2001–2008 |
| Ellicott City, Maryland, US | 5 | 2007–2010 |