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Inventor

Toshihiko Shiozawa

Inventor
Amagasaki, JP

Overview

6→
Patents
2011–2013
Patent span
Electricity
Primary field (CPC H)

Patents· 6 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1050%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1025%
H10DInorganic electric semiconductor devices17%
C23CCoating metallic material8%
PatentTitleYear
8,372,761'Plasma oxidation processing method, plasma processing apparatus and storage medium'20138,119,530'Pattern forming method and semiconductor device manufacturing method'20128,043,979'Plasma oxidizing method, storage medium, and plasma processing apparatus'20118,003,484'Method for forming silicon oxide film, plasma processing apparatus and storage medium'20117,989,364'Plasma oxidation processing method'20117,910,495'Plasma oxidizing method, plasma processing apparatus, and storage medium'2011

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2011–2013Patents assigned to TOKYO ELECTRON LTD (5)· patent assignee history
2011–2012Patents assigned to UNIV NAGOYA NAT UNIV CORP (2)· patent assignee history
2011–2013Based in Amagasaki, JP· patent location history
2012–2013Patents assigned to KABE YOSHIRO (2)· patent assignee history
2012–2013Patents assigned to KITAGAWA JUNICHI (2)· patent assignee history
2012–2013Patents assigned to SHIOZAWA TOSHIHIKO (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOKYO ELECTRON LTD52011–2013
KABE YOSHIRO22012–2013
KITAGAWA JUNICHI22012–2013
SHIOZAWA TOSHIHIKOself22012–2013
UNIV NAGOYA NAT UNIV CORP22011–2012
Locations
LocationPatentsSpan
Amagasaki, JP62011–2013