Inventor
Masaharu Tachimori
Inventor
Hikari, JP
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1043%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests29%
C30BSingle-crystal growth14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
PatentTitleYear
5,918,151'Method of manufacturing a semiconductor substrate and an apparatus for manufacturing the same'19995,534,446'Process for producing buried insulator layer in semiconductor substrate'19965,373,804'Single silicon crystal having low OSF density induced by oxidation and method for production thereof'19945,189,508'Silicon wafer excelling in gettering ability and method for production thereof'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993–1999Patents assigned to NIPPON STEEL CORP (4)· patent assignee history
1993–1994Patents assigned to NSC ELECTRON CORP (2)· patent assignee history
1993–1994Based in Hikari, JP· patent location history
1996Based in Kawasaki, JP· patent location history
1999Based in Sagamihara, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NIPPON STEEL CORP | 4 | 1993–1999 |
| NSC ELECTRON CORP | 2 | 1993–1994 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hikari, JP | 2 | 1993–1994 |
| Sagamihara, JP | 1 | 1999 |
| Kawasaki, JP | 1 | 1996 |