Inventor
JAU-YI WU
Inventor
TW
Overview
Patents· 30 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for28%
H10BElectronic memory devices23%
G11CStatic stores20%
H01LSemiconductor devices15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
G06FElectric digital data processing2%
H01FMagnets2%
G06NComputing arrangements based on specific computational models1%
H10DInorganic electric semiconductor devices1%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h101%
PatentTitleYear
12,477,747Memory device202512,477,961Method of forming phase-change memory layers on recessed electrodes202512,327,588Stressing algorithm for solving cell-to-cell variations in phase change memory202512,075,713Phase-change memory and method of forming same2024D1029837Keyboard202411,974,510Phase change memory structure and the same202411,950,518Phase-change random access memory device and method of making the same202411,910,621Memory device and manufacturing method thereof202411,862,244Stressing algorithm for solving cell-to-cell variations in phase change memory202411,862,243Memory device and method thereof202411,856,795Phase change memory structure and manufacturing method for the same202311,847,313Electronic device having touchpad with operating functions selected based on gesture command and touch method thereof202311,823,741PCRAM analog programming by a gradual reset cooling step202311,700,779Method of forming phase-change memory layers on recessed electrodes202311,696,519Phase-change memory and method of forming same202311,630,872Internet data collection method202311,563,056Semiconductor memory device including phase change material layers and method for manufacturing thereof202311,475,950Stressing algorithm for solving cell-to-cell variations in phase change memory202211,443,803Memory device and method thereof202211,349,070Phase-change random access memory device with doped Ge--Sb--Te layers and method of making the same202211,302,865Phase-change memory with two-portioned phase-change layer202211,289,161PCRAM analog programming by a gradual reset cooling step202211,276,818Phase change memory structure and the same202211,276,464Programming method and reading method for memory device202211,245,072Phase-change memory and method of forming same202211,217,304Memory operation method and circuit202211,152,565Memory device and manufacturing method thereof202111,152,569PCRAM structure with selector device202111,145,690Memory device and manufacturing method thereof202111,139,430Phase change random access memory and method of manufacturing2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (27)· patent assignee history
2021–2025Based in TW· patent location history
2023–2024Patents assigned to ASUSTEK COMP INC (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 27 | 2021–2025 |
| ASUSTEK COMP INC | 3 | 2023–2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 30 | 2021–2025 |