Inventor
Navneeth Kankani
Inventor
Fremont, CA, US
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G06Fprimary
G06FElectric digital data processing54%
G11CStatic stores32%
H01LSemiconductor devices5%
H10BElectronic memory devices5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
11,010,074Adjustable performance parameters for SSDs202110,884,629Shard rebalancing based on over-provisioning202110,642,517Adjustable performance parameters for SSDs202010,509,598Method and apparatus for programming flash based storage using segmented writes201910,467,134Dynamic anneal characteristics for annealing non-volatile memory201910,026,492Multi-die programming with die-jumping induced periodic delays20189,898,364'Method and system for dynamic word line based configuration of a three-dimensional memory device'20189,891,844'Variable bit encoding per NAND flash cell to improve device endurance and extend life of flash-based storage devices'20189,864,525'Variable bit encoding per NAND flash cell to extend life of flash-based storage devices and preserve over-provisioning'20189,761,290'Overheat prevention for annealing non-volatile memory'20179,721,672'Multi-die programming with die-jumping induced periodic delays'20179,645,749'Method and system for recharacterizing the storage density of a memory device or a portion thereof'20179,639,463'Heuristic aware garbage collection scheme in storage systems'20179,639,282'Variable bit encoding per NAND flash cell to improve device endurance and extend life of flash-based storage devices'20179,606,737'Variable bit encoding per NAND flash cell to extend life of flash-based storage devices and preserve over-provisioning'20179,361,221'Write amplification reduction through reliable writes during garbage collection'20169,244,763'System and method for updating a reading threshold voltage based on symbol transition information'20169,235,509'Write amplification reduction by delaying read access to data written during garbage collection'20169,164,830'Methods and devices to increase memory device data reliability'20159,037,624'Using memory access times for random number generation'20158,891,303'Method and system for dynamic word line based configuration of a three-dimensional memory device'20148,806,106'Estimating wear of non-volatile, solid state memory'20148,705,291'Sanitizing a non-volatile memory through charge accumulation'20148,631,294'Methods and devices to increase memory device data reliability'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2017Patents assigned to SANDISK ENTPR IP LLC (8)· patent assignee history
2014–2015Patents assigned to SEAGATE TECHNOLOGY LLC (5)· patent assignee history
2014–2015Patents assigned to KANKANI NAVNEETH (4)· patent assignee history
2014–2018Patents assigned to SANDISK TECHNOLOGIES INC (4)· patent assignee history
2014–2021Based in Fremont, CA, US· patent location history
2014–2015Based in Eden Prairie, MN, US· patent location history
2017–2019Patents assigned to SANDISK TECHNOLOGIES LLC (11)· patent assignee history
2020–2021Based in San Jose, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SANDISK TECHNOLOGIES LLC | 11 | 2017–2019 |
| SANDISK ENTPR IP LLC | 8 | 2014–2017 |
| SEAGATE TECHNOLOGY LLC | 5 | 2014–2015 |
| KANKANI NAVNEETHself | 4 | 2014–2015 |
| SANDISK TECHNOLOGIES INC | 4 | 2014–2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Fremont, California, US | 18 | 2014–2021 |
| Eden Prairie, Minnesota, US | 4 | 2014–2015 |
| San Jose, California, US | 2 | 2020–2021 |