Inventor

Masamichi Saito

Inventor

Niigata, JP

Overview

1994–2020

Patent span

Physics

Primary field (CPC G)

Patents· 168 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Bprimary

G11BInformation storage based on relative movement between record carrier and transducer22%

B82YSpecific uses or applications of nanostructures21%

G01RMeasuring electric variables17%

H01FMagnets15%

Y10TTechnical subjects covered by former us classification11%

H10NElectric solid-state devices not otherwise provided for8%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%

G11CStatic stores1%

H01LSemiconductor devices1%

C23CCoating metallic material1%

PatentTitleYear

10,650,849Magnetoresistive element having exchange-coupled film including PtCr/XMn antiferromagnetic bilayer2020 10,184,993Magnetometric sensor and current sensor2019 9,945,913Magnetic sensor, method for manufacturing magnetic sensor, and current sensor2018 9,435,831'Current sensor'2016 9,229,032'Current sensor'2016 9,207,264'Current sensor'2015 9,146,260'Magnetic balance type current sensor'2015 8,952,689'Magnetic sensor and magnetic balance type current sensor utilizing same'2015 8,760,158'Current sensor'2014 8,754,642'Magnetic balance type current sensor'2014 8,519,704'Magnetic-balance-system current sensor'2013 8,487,612'Current sensor'2013 8,476,899'Magnetic sensor and magnetic balance type current sensor including the same'2013 8,437,107'Magnetic coupling type isolator'2013 8,410,893'Magnetic detector and method for manufacturing the same'2013 8,395,383'Current sensor including magnetic detecting element'2013 8,269,492'Magnetic balance type current sensor'2012 8,270,127'Magnetic coupling-type isolator'2012 8,222,769'Magnetic coupling type isolator'2012 8,208,231'Tunneling magnetic sensing element with insertion magnetic layer inspired into soft magnetic layer'2012 8,130,476'Tunneling magnetic sensing element and method for manufacturing the same'2012 8,124,253'Tunneling magnetic sensing element including MGO film as insulating barrier layer'2012 8,054,588'Tunneling magnetoresistive element including multilayer free magnetic layer having inserted nonmagnetic metal sublayer'2011 8,045,300'Tunneling magnetic sensing element and method for producing same'2011 8,023,233'Tunneling magnetic sensing element including free magnetic layer and IrMn protective layer disposed thereon and method for manufacturing the same'2011 8,009,391'Magnetic sensing element and method for manufacturing the same'2011 7,969,693'Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor'2011 7,969,690'Tunneling magnetoresistive element which includes Mg-O barrier layer and in which nonmagnetic metal sublayer is disposed in one of magnetic layers'2011 7,961,442'Tunneling magnetic detecting element having insulation barrier layer and method for making the same'2011 7,933,100'Tunneling magnetic sensor including free magnetic layer and magnesium protective layer disposed thereon'2011 7,916,436'Tunneling magnetic sensor including platinum layer and method for producing the same'2011 7,907,370'Tunneling magnetic sensing element having free layer containing CoFe alloy'2011 7,898,776'Tunneling magnetic sensing element including enhancing layer having high Fe concentration in the vicinity of barrier layer'2011 7,881,024'Tunnel-type magnetic detecting element and method of manufacturing the same'2011 7,800,866'Magnetic sensing element containing quaternary Heusler alloy Co2Mn (Ge1-xSnx) which constitutes a free magnetic layer or pinned magnetic layer'2010 7,800,867'CPP GMR head with antiferromagnetic layer disposed at rear of ferrimagnetic pinned layer'2010 7,787,221'Tunneling magnetic sensing element including non-magnetic metal layer between magnetic layers'2010 7,760,473'Magnetoresistance element employing Heusler alloy as magnetic layer'2010 7,738,218'Magnetic detection head and method for manufacturing the same'2010 7,724,481'Magnetic sensing element including free magnetic layer or pinned magnetic layer having two sublayers that are composed of different CoMn-based heusler alloys'2010 7,643,254'Tunnel-effect type magnetic sensor having free layer including non-magnetic metal layer'2010 7,616,410'Magnetic detecting element having free layer formed of NiFe alloy and method of manufacturing the same'2009 7,609,489'Magnetic sensor using NiFe alloy for pinned layer'2009 7,599,155'Self-pinned CPP giant magnetoresistive head with antiferromagnetic film absent from current path'2009 7,567,413'Magnetic detecting element with diffusion-preventing layer between spacer Cu and magnetic layer, and method of manufacturing the same'2009 7,564,661'Magnetic sensing element including free layer having gradient composition and method for manufacturing the same'2009 7,558,029'Magnetic detectible head comprising free layer'2009 7,554,776'CCP magnetic detecting element including a self-pinned CoFe layer'2009 7,502,210'CPP magnetic detecting device containing NiFe alloy on free layer thereof'2009 7,499,249'Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer and method of manufacturing the same'2009 7,499,248'Magnetic detective head comprising free layer'2009 7,480,122'Magnetic detecting device having free layer or pinned layer formed by lamination of magnetic alloy and Cu layer and method of manufacturing magnetic detecting device'2009 7,466,525'Magnetic sensing element including laminated film composed of half-metal and NiFe alloy as free layer'2008 7,463,457'CPP giant magnetoresistive element with particular bulk scattering coefficient'2008 7,428,128'High read output, high sensitivity magnetic sensing element'2008 7,380,850'Holding structure for holding an object'2008 7,365,949'CPP giant magnetoresistive head including pinned magnetic layer that extends in the height direction'2008 7,362,546'Spin-valve magnetoresistive element having fixed magnetic layer of epitaxal laminate including magnetic layer and nonmagnetic layer'2008 7,336,453'Magnetic sensing element including pinned layer and/or free layer composed of [110] crystal planes-oriented Heusler alloy'2008 7,336,451'Magnetic sensing element containing half-metallic alloy'2008 7,327,539'CPP giant magnetoresistive head with large-area metal film provided between shield and element'2008 7,310,207'Magnetic sensing element including magnetic layer composed of Heusler alloy disposed on underlayer having {111}-oriented fcc structure'2007 7,310,208'Magnetoresistive sensor containing self-pinned layer containing a plurality of magnetic sublayers with magnetostriction-enhancing layer made of a nonmagnetic material'2007 7,295,408'Dual type magnetic sensing element wherein Î”RÃ—A in upstream part in flow direction of electric current is smaller than Î”RÃ—A in downstream part'2007 7,295,409'CPP giant magnetoresistive element with particular bulk scattering coefficient'2007 7,268,983'Magnetic sensing device with multilayered pinned magnetic layer having magnetostriction-enhancing layer'2007 7,268,984'Magnetic detecting element having a self-pinned layer'2007 7,268,978'Self-pinned magnetic detecting element'2007 7,229,706'Magnetic detecting element having pinned magnetic layers disposed on both sides of free magnetic layer'2007 7,220,499'CPP giant magnetoresistive head having antiferromagnetic film disposed in rear of element'2007 7,218,487'Exchange coupling film and magnetoresistive element using the same'2007 7,218,485'GMR element having fixed magnetic layer provided on side surface of free magnetic layer'2007 7,196,879'Exchange coupling film and magnetoresistive element using the same'2007 7,164,560'Spin-valve magnetoresistive thin film element'2007 7,158,354'Dual-type magnetic detecting element in which free magnetic layer and pinned magnetic layer have suitably selected Î² values'2007 7,142,399'Exchange coupling film and magnetoresistive element using the same'2006 7,132,175'GMR magnetic detecting element comprising current limiting layer provided in free magnetic layer and method of manufacturing the detecting element'2006 7,126,797'Spin valve magnetoresistive element having pinned magnetic layer composed of epitaxial laminated film having magnetic sublayers and nanomagnetic interlayer'2006 7,123,453'Exchange coupling film and magnetoresistive element using the same'2006 7,119,998'Exchange coupling film and magnetoresistive element using the same'2006 7,119,996'Exchange coupling film and magnetoresistive element using the same'2006 7,106,559'Exchange coupling film and magnetoresistive element using the same'2006 7,092,222'Exchange coupled film having improved current-carrying reliability and improved rate of change in resistance and magnetic sensing element using same'2006 7,077,936'Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling film'2006 7,054,116'Spin valve element and thin film magnetic head'2006 7,050,275'Exchange coupled film having improved current-carrying reliability and improved rate of change in resistance and magnetic sensing element using same'2006 7,045,224'Magnetic detecting element having antiferromagnetic film having predetermined space in track width direction and method for manufacturing the same'2006 7,029,771'Magnetic sensor having free layer additionally provided with magnetic anisotropy by shape anisotropy'2006 7,023,670'Magnetic sensing element with in-stack biasing using ferromagnetic sublayers'2006 7,005,014'Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling film'2006 6,992,867'Spin valve element and thin film magnetic head having antiferromagnetic coupled layers'2006 6,947,263'CPP mode magnetic sensing element including a multilayer free layer biased by an antiferromagnetic layer'2005 6,929,959'Manufacturing method of CPP type magnetic sensor having current-squeezing path'2005 6,893,734'Magnetic sensing element with improved sensitivity and method for making the same'2005 6,893,740'CPP type magnetoresistive sensor including pinned magnetic layer provided with hard magnetic region'2005 6,879,472'Exchange coupling film and electoresistive sensor using the same'2005 6,873,500'Exchange coupling film capable of improving playback characteristics'2005 6,862,158'Exchange coupling film having improved wettability of seed layer'2005 6,856,494'Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers'2005 6,853,521'Exchange coupling film having improved wettability of seed layer'2005 6,847,508'Spin valve thin film magnetic element and thin film magnetic head'2005 6,806,804'Magnetic detecting element having -values selected for free magnetic layer and pinned magnetic layer'2004 6,790,541'Exchange coupling film and electroresistive sensor using the same'2004 6,764,778'Thin film magnetic element with accurately controllable track width and method of manufacturing the same'2004 6,765,768'Thin-film magnetic head having ensured insulation between shield and magnetic detecting element'2004 6,757,962'Method for manufacturing exchange bias type magnetic field sensing element'2004 6,678,128'Exchange coupling film and electroresistive sensor using the same'2004 6,648,985'Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling'2003 6,646,835'Spin-valve magnetoresistive thin film element'2003 6,639,762'Spin valve thin-film magnetic device having free magnetic layer in ferrimagnetic state and manufacturing method therefor'2003 6,639,764'Spin-valve magnetoresistive thin film element'2003 6,635,366'Spin valve thin film magnetic element and thin film magnetic head'2003 6,628,483'Dual spin-valve magnetoresistive thin film element'2003 6,608,740'Spin-valve thin-film magnetic element provided with single free magnetic layer'2003 6,608,739'Spin valve thin film magnetic element having first and second free magnetic layers having antiparallel magnetization directions'2003 6,607,641'Method of producing exchange coupling film and method of producing magnetoresistive sensor by using the exchange coupling film'2003 6,597,542'Dual spin-valve magnetoresistive thin film element'2003 6,594,121'Thin-film magnetic head provided with magnetoresistive thin-film element'2003 6,591,479'Production method for a spin-valve type magnetoresistive element'2003 6,586,121'Spin-valve thin-film magnetic element'2003 6,549,384'Spin-valve magnetoresistive thin film element'2003 RE037992'Magnetoresistive head using exchange anisotropic magnetic field with an antiferromagnetic layer'2003 6,504,688'Magnetoresistive sensor capable of providing strong exchange coupling magnetic field, and thin-film magnetic head using the same'2003 6,496,338'Spin-valve magnetoresistive sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias'2002 RE037819'Manufacturing method for magnetoresistive head having an antiferromagnetic layer of PTMN'2002 6,424,506'Spin-valve magnetoresistive thin film element'2002 6,387,548'Exchange coupling film and magnetoresistance effect type element using this exchange coupling film, and thin film magnetic head using the magnetoresistance effect type element'2002 6,352,621'Method of manufacturing film laminate having exchange anisotropic magnetic field'2002 6,347,022'Spin-valve type magnetoresistive thin film element and spin-valve type magnetoresistive thin film head using the same'2002 6,307,722'Thin-film magnetic head and production method thereof'2001 6,301,089'Spin-valve type magnetoresistive thin film element comprising free magnetic layer having nife alloy layer'2001 6,295,186'Spin-valve magnetoresistive Sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias'2001 6,282,069'Magnetoresistive element having a first antiferromagnetic layer contacting a pinned magnetic layer and a second antiferromagnetic layer contacting a free magnetic layer'2001 6,221,172'Manufacturing method of spin-valve magnetoresistive thin film element'2001 6,210,818'Magnetoresistive element'2001 6,201,465'Magnetoresistive sensor and its manufacturing method'2001 6,198,378'Magnetoresisitive sensor and manufacturing method therefor'2001 6,157,524'Method of manufacturing spin-valve type thin film element having remagnetized bias layer'2000 6,153,062'Magnetoresistive sensor and head'2000 6,150,045'Spin-valve type magnetoresistive thin film element and its manufacturing method'2000 6,128,167'Spin-valve magnetoresistive element'2000 6,122,151'Spin-valve magnetoresistive element'2000 6,112,402'Method for manufacturing magnetoresistive sensor'2000 6,115,224'Spin-valve type thin film element and its manufacturing method'2000 6,094,328'Thin-film magnetic head with antiferromagnetic layer and hard magnetic layers arranged to bias a magnetoresistive device'2000 6,074,707'Method of producing magnetoresistive element'2000 6,018,443'Thin film magnetic head having hard films for magnetizing a shield layer in a single domain state'2000 5,992,004'Method for producing a thin film magnetic head'1999 5,986,736'Liquid crystal device, image display apparatus and image forming apparatus'1999 5,972,420'Magnetoresistive sensor manufacturing method'1999 5,959,810'Spin-valve magnetoresistive element with biasing layer'1999 5,923,503'Thin-film magnetic head and production method thereof'1999 5,910,344'Method of manufacturing a magnetoresistive sensor'1999 5,877,836'Liquid crystal device and process for production thereof'1999 5,869,963'Magnetoresistive sensor and head'1999 5,844,756'Magnetoresistive head having manganese diffusion layer'1998 5,844,650'Rubbing treating apparatus and rubbing treating method including suction passages to hold masking sheets in place'1998 5,815,230'Liquid crystal device and process for production thereof'1998 5,805,389'Magnetoresistive head'1998 5,784,225'Manufacturing method for magnetoresistive head having an antiferromagnetic layer of PTMN'1998 5,768,067'Magnetoresistive head using exchange anisotropic magnetic field with an antiferromagnetic layer'1998 5,691,864'Magnetoresistive head'1997 5,687,044'Magnetoresistive head with micro-crystallite shielding layer'1997 5,675,460'Magnetic head and method of producing the same'1997 5,673,162'Magnetoresistive head with soft adjacent layer comprising amorphous magnetic material'1997 5,518,550'Stage apparatus for an exposure apparatus including a contant tension spring for canceling out a gravitational force of a movable stage by a tensile force'1996 5,514,464'Magnetic recording medium'1996 5,372,894'Magnetic recording media comprising a back coat containing a mixture of a thermosetting resin and photosetting resin and a process therefor'1994

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1994–1996Based in Mito, JP· patent location history

1996–1999Based in Inagi, JP· patent location history

1997–2019Patents assigned to ALPS ELECTRIC CO LTD (117)· patent assignee history

1997–2020Based in Niigata, JP· patent location history

1997–1998Based in Nagaoka, JP· patent location history

2007–2019Based in Tokyo, JP· patent location history

2008–2012Patents assigned to TDK CORP (27)· patent assignee history

2012–2015Patents assigned to SAITO MASAMICHI (14)· patent assignee history

2012–2015Patents assigned to IDE YOSUKE (13)· patent assignee history

2012–2016Patents assigned to ALPS GREEN DEVICES CO LTD (12)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
ALPS ELECTRIC CO LTD	117	1997–2019
TDK CORP	27	2008–2012
SAITO MASAMICHIself	14	2012–2015
IDE YOSUKE	13	2012–2015
ALPS GREEN DEVICES CO LTD	12	2012–2016

Locations

Location	Patents	Span
Niigata, JP	150	1997–2020
Tokyo, JP	6	2007–2019
Inagi, JP	5	1996–1999
Nagaoka, JP	2	1997–1998
Mito, JP	2	1994–1996