Inventor
NYLES WYNN CODY
Inventor
US
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices29%
H10DInorganic electric semiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
B82YSpecific uses or applications of nanostructures13%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation1%
PatentTitleYear
12,575,199Image sensor devices including a superlattice202612,477,798Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer202512,322,594Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer202512,315,722Method for making a radio frequency silicon-on-insulator (RFSOI) wafer including a superlattice202512,315,723Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms202512,199,148Semiconductor device including superlattice with O18 enriched monolayers202512,191,160Method for making a semiconductor superlattices with different non-semiconductor thermal stabilities202512,142,641Method for making gate-all-around (GAA) device including a superlattice202412,119,380Method for making semiconductor device including superlattice with oxygen and carbon monolayers202412,046,470Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer202411,978,771Gate-all-around (GAA) device including a superlattice202411,923,418Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer202411,848,356Method for making semiconductor device including superlattice with oxygen and carbon monolayers202311,837,634Semiconductor device including superlattice with oxygen and carbon monolayers202311,810,784Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer202311,728,385Semiconductor device including superlattice with O202311,721,546Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms202311,682,712Method for making semiconductor device including superlattice with O18 enriched monolayers202311,664,427Vertical semiconductor device with enhanced contact structure and associated methods202311,631,584Method for making semiconductor device with selective etching of superlattice to define etch stop layer202311,430,869Method for making superlattice structures with reduced defect densities202211,387,325Vertical semiconductor device with enhanced contact structure and associated methods202211,302,823Method for making semiconductor device including a superlattice with different non-semiconductor material monolayers202211,177,351Semiconductor device including a superlattice with different non-semiconductor material monolayers2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to ATOMERA INC (24)· patent assignee history
2021–2026Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ATOMERA INC | 24 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 24 | 2021–2026 |