Inventor
Erik Janzen
Inventor
Borensberg, SE
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth23%
H10DInorganic electric semiconductor devices21%
C23CCoating metallic material14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests12%
Y10TTechnical subjects covered by former us classification7%
H01LSemiconductor devices5%
H04BTransmission2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
PatentTitleYear
10,403,746Heterostructure and method of its production201910,269,565Semiconductor device structure and methods of its production201910,199,222Semiconductor device structure and methods of its production201910,017,877Silicon carbide crystal growth in a CVD reactor using chlorinated chemistry20187,361,222'Device and method for producing single crystals by vapor deposition'20087,018,597'High resistivity silicon carbide single crystal'20066,096,627'Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC'20006,048,398'Device for epitaxially growing objects'20006,039,812'Device for epitaxially growing objects and method for such a growth'20006,030,661'Device and a method for epitaxially growing objects by CVD'20005,900,648'Semiconductor device having an insulated gate'19995,851,908'Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiC'19985,847,414'Semiconductor device having a hetero-junction between SiC and a Group 3B-nitride'19985,831,292'IGBT having a vertical channel'19985,804,482'Method for producing a semiconductor device having a semiconductor layer of SiC'19985,792,257'Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD'19985,704,985'Device and a method for epitaxially growing objects by CVD'19985,654,208'Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step'19975,650,638'Semiconductor device having a passivation layer'19974,893,354'System and method for self-compensating fiber-optic data transmission at temperatures up to 200 degrees C.'1990Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1990Patents assigned to ASEA ATOM AB (1)· patent assignee history
1990Based in Vaster.ang.s, SE· patent location history
1997–2000Patents assigned to ABB RESEARCH LTD (13)· patent assignee history
1997–2008Based in Borensberg, SE· patent location history
1998–2000Patents assigned to OKMETIC LTD (4)· patent assignee history
1998Based in Borensburg, SE· patent location history
2006–2008Patents assigned to NORSTEL AB (2)· patent assignee history
2018–2019Based in Linköping, SE· patent location history
2019Patents assigned to SWEGAN AB (2)· patent assignee history
2019Based in Linkoping, SE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ABB RESEARCH LTD | 13 | 1997–2000 |
| OKMETIC LTD | 4 | 1998–2000 |
| NORSTEL AB | 2 | 2006–2008 |
| SWEGAN AB | 2 | 2019 |
| ASEA ATOM AB | 1 | 1990 |
Locations
| Location | Patents | Span |
|---|---|---|
| Borensberg, SE | 14 | 1997–2008 |
| Linkoping, SE | 2 | 2019 |
| Linköping, SE | 2 | 2018–2019 |
| Borensburg, SE | 1 | 1998 |
| Vaster.ang.s, SE | 1 | 1990 |