Inventor

Hiroki Terazaki

Inventor
Tsukuba, JP

Overview

20→
Patents
2001–2014
Patent span
Chemistry
Primary field (CPC C)

Patents· 20 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C09Gprimary
C09GPolishing compositions27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
C09KMaterials for miscellaneous applications, not provided for elsewhere21%
C23FNon-mechanical removal of metallic material from surface12%
C01FCompounds of the metals beryllium, magnesium, aluminium, calcium, strontium, barium, radium, thorium, or of the rare-earth metals5%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds5%
H01LSemiconductor devices1%
PatentTitleYear
8,900,477'Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same'20148,616,936'Abrasive, method of polishing target member and process for producing semiconductor device'20138,491,807'Abrasive liquid for metal and method for polishing'20138,226,849'Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same'20128,162,725'Abrasive, method of polishing target member and process for producing semiconductor device'20128,137,159'Abrasive, method of polishing target member and process for producing semiconductor device'20128,038,898'Abrasive liquid for metal and method for polishing'20117,963,825'Abrasive, method of polishing target member and process for producing semiconductor device'20117,871,308'Abrasive, method of polishing target member and process for producing semiconductor device'20117,867,303'Cerium oxide abrasive and method of polishing substrates'20117,799,686'Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same'20107,799,688'Polishing fluid and method of polishing'20107,708,788'Cerium oxide abrasive and method of polishing substrates'20107,250,369'Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same'20077,115,021'Abrasive, method of polishing target member and process for producing semiconductor device'20066,899,821'Abrasive liquid for metal and method for polishing'20056,896,825'Abrasive liquid for metal and method for polishing'20056,863,700'Cerium oxide abrasive and method of polishing substrates'20056,343,976'Abrasive, method of polishing wafer, and method of producing semiconductor device'20026,221,118'Cerium oxide abrasive and method of polishing substrates'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2014Patents assigned to HITACHI CHEMICAL CO LTD (18)· patent assignee history
2001–2014Based in Tsukuba, JP· patent location history
2002–2013Based in Ibaraki, JP· patent location history
2005–2014Patents assigned to HITACHI LTD (7)· patent assignee history
2010Based in Hitachi, JP· patent location history
2012–2014Patents assigned to TERAZAKI HIROKI (6)· patent assignee history
2012–2013Patents assigned to MATSUZAWA JUN (4)· patent assignee history
2012–2013Patents assigned to ASHIZAWA TORANOSUKE (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI CHEMICAL CO LTD182001–2014
HITACHI LTD72005–2014
TERAZAKI HIROKIself62012–2014
MATSUZAWA JUN42012–2013
ASHIZAWA TORANOSUKE32012–2013
Locations
LocationPatentsSpan
Tsukuba, JP112001–2014
Ibaraki, JP82002–2013
Hitachi, JP12010