Inventor

Jenoe Tihanyi

Inventor

Kirchheim, DE

Overview

1976–2011

Patent span

Electricity

Primary field (CPC H)

Patents· 120 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices44%

H03KPulse technique23%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%

G01RMeasuring electric variables4%

G01KMeasuring temperature3%

H02HEmergency protective circuit arrangements2%

H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems2%

H10BElectronic memory devices2%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%

PatentTitleYear

7,999,343'Semiconductor component with a space-saving edge termination, and method for production of such component'2011 7,724,064'Circuit arrangement having a transistor component and a freewheeling element'2010 7,560,783'Metal-semiconductor contact, semiconductor component, integrated circuit arrangement and method'2009 7,492,208'MOSFET circuit having reduced output voltage oscillations during a switch-off operation'2009 7,453,308'Circuit arrangement having a load transistor and a voltage limiting circuit and method for driving a load transistor'2008 7,423,325'Lateral field-effect-controllable semiconductor component for RF applications'2008 7,301,204'SOI component with increased dielectric strength and improved heat dissipation'2007 7,211,846'Transistor having compensation zones enabling a low on-resistance and a high reverse voltage'2007 7,173,306'Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone'2007 7,148,736'Power switch'2006 7,091,573'Power transistor'2006 7,087,981'Metal semiconductor contact, semiconductor component, integrated circuit arrangement and method'2006 7,050,763'Method and device for transferring a signal from a signal source to a signal sink in a system'2006 7,049,656'Field-effect-controllable semiconductor configuration with a laterally extending channel zone'2006 6,891,204'Semiconductor component having field-shaping regions'2005 6,870,201'High voltage resistant edge structure for semiconductor components'2005 6,864,535'Controllable semiconductor switching element that blocks in both directions'2005 6,861,706'Compensation semiconductor component'2005 6,812,524'Field effect controlled semiconductor component'2004 6,803,629'Vertical field-effect transistor with compensation zones and terminals at one side of a semiconductor body'2004 6,777,726'MOSFET source, drain and gate regions in a trench between a semiconductor pillar and filling insulation'2004 6,768,169'Transistor having compensation zones enabling a low on-resistance and a high reverse voltage'2004 6,735,065'Semiconductor module'2004 6,717,788'Temperature-protected semiconductor circuit configuration'2004 6,693,314'Junction field-effect transistor with more highly doped connecting region'2004 6,686,626'Source-down power transistor'2004 6,686,614'Semiconductor switching element with integrated Schottky diode and process for producing the switching element and diode'2004 6,686,625'Field effect-controllable semiconductor component with two-directional blocking, and a method of producing the semiconductor component'2004 6,639,388'Free wheeling buck regulator with floating body zone switch'2003 6,628,491'Semiconductor component with a circuit for driving an electrical load'2003 6,617,640'Field-effect-controllable semiconductor configuration with a laterally extending channel zone'2003 6,541,804'Junction-isolated lateral MOSFET for high-/low-side switches'2003 6,534,830'Low impedance VDMOS semiconductor component'2003 6,479,876'Vertical power MOSFET'2002 6,459,142'Power MOSFET'2002 6,445,038'Silicon on insulator high-voltage switch'2002 6,411,484'VLSI circuit with temperature monitoring'2002 6,399,435'Method for producing a DRAM cell with a trench capacitor'2002 6,384,456'Field-effect transistor having a high packing density and method for fabricating it'2002 6,376,890'High-voltage edge termination for planar structures'2002 6,365,919'Silicon carbide junction field effect transistor'2002 6,362,505'MOS field-effect transistor with auxiliary electrode'2002 6,326,656'Lateral high-voltage transistor'2001 6,323,531'Two-chip power IC having an improved short-circuit response'2001 6,313,485'Gate-controlled thyristor'2001 6,313,506'Silicon-on-insulator field effect transistor'2001 6,309,920'Bipolar transistor which can be controlled by field effect and method for producing the same'2001 6,310,331'Circuit configuration for driving an ignition coil'2001 6,284,620'Method for fabricating an SOI wafer for low-impedance high-voltage semiconductor components'2001 6,284,604'Method for producing a field-effect-controllable, vertical semiconductor component'2001 6,281,119'Method for making contact with a semiconductor layer and semiconductor structure having a plurality of layers'2001 6,274,904'Edge structure and drift region for a semiconductor component and production method'2001 6,271,562'Semiconductor component which can be controlled by a field effect'2001 6,225,643'SOI cell and method for producing it'2001 6,184,545'Semiconductor component with metal-semiconductor junction with low reverse current'2001 6,181,171'Circuit configuration for pulsed current regulation of inductive loads'2001 6,169,441'Drive circuit for a field effect-controlled power semiconductor component'2001 6,166,418'High-voltage SOI thin-film transistor'2000 6,150,694'Silicon-on-insulator insulated gate bipolar transistor'2000 6,127,243'Method for bonding two wafers'2000 6,124,612'FET with source-substrate connection and method for producing the FET'2000 6,061,221'Temperature-protected electrical switch component'2000 6,028,457'CMOS comparator'2000 6,018,263'Trigger circuit for a field-effect-controlled power semiconductor component'2000 5,986,441'Circuit configuration for capturing the load current of a power semiconductor component with a load on the source side'1999 5,973,360'Field effect-controllable semiconductor component'1999 5,945,708'Field-effect-controllable, vertical semiconductor component and method for producing the same'1999 5,923,066'Field-effect-controllable semiconductor component'1999 5,914,619'Trigger circuit for a power fet having a source-side load'1999 5,900,775'MOSFET with temperature protection'1999 5,869,864'Field effect controlled semiconductor component'1999 5,834,954'Integrated comparator circuit'1998 5,815,358'Circuit configuration and semiconductor body with a power switch'1998 5,815,027'Circuit configuration for detecting a load current of a power semiconductor component with a source-side load'1998 5,798,666'Circuit configuration for triggering a power enhancement MOSFET'1998 5,736,877'Circuit configuration for detecting idling of a load'1998 5,726,478'Integrated power semiconductor component having a substrate with a protective structure in the substrate'1998 5,724,218'Power transistor with short-circuit protection'1998 5,703,521'Circuit configuration for monitoring the temperature of a power semiconductor component'1997 5,672,893'Protective configuration against electrostatic discharges in semiconductor components controllable by field effect'1997 5,656,968'Circuit arrangement for regulating the load current of a power MOSFET'1997 5,638,021'Power semiconductor component with temperature sensor'1997 5,633,515'Semiconductor component arrangement for overvoltage protection of MOSFETs and IGBTS'1997 5,583,060'Method for manufacturing field effect controlled semiconductor components'1996 5,457,419'MOSFET with temperature protection'1995 5,446,406'Control circuit for an MOS semiconductor component with a source-side load'1995 5,438,215'Power MOSFET'1995 5,434,521'Integrated comparator circuit'1995 5,371,418'Drive circuit for a power MOSFET with load at the source side'1994 5,352,932'Trigger circuit for a power FET with a load on the source side'1994 5,272,399'Circuit limiting the load current of a power MOSFET'1993 5,266,840'Circuit for detecting the failure of a load which is connected in series with an electronic switch'1993 5,172,290'Gate-source protective circuit for a power MOSFET'1992 5,160,862'MOSFET switch circuit for preventing the switch being turned on during deactivation of an inductive load'1992 5,132,766'Bipolar transistor electrode'1992 5,086,364'Circuitry for detecting a short circuit of a load in series with an FET'1992 5,072,143'Zero point detector for an optically controllable thyristor'1991 5,029,322'Power MOSFET with current-monitoring'1991 4,952,827'Circuit arrangement for controlling the load current in a power MOSFET'1990 4,951,110'Power semiconductor structural element with four layers'1990 4,937,646'MOSFET with temperature protection'1990 4,893,165'Bipolar transistor controllable by field effect'1990 4,875,131'Circuit configuration for monitoring a semiconductor structural element and providing a signal when the temperature exceeds a predetermined level'1989 4,859,875'Optocoupler for power FET'1989 4,801,824'Integrable buffer circuit for voltage level conversion having clamping means'1989 4,737,667'Driving circuitry for a MOSFET having a source load'1988 4,730,228'Overtemperature detection of power semiconductor components'1988 4,728,826'MOSFET switch with inductive load'1988 4,691,129'Drive circuit for a power MOSFET with source-side load'1987 4,688,071'Circuit arrangement comprising a phototransistor'1987 4,677,325'High voltage MOSFET switch'1987 4,613,883'Dynamic semiconductor memory cell and method for its manufacture'1986 4,578,596'Circuit arrangement for driving a thyristor with a phototransistor'1986 4,247,860'MIS Field effect transistor for high source-drain voltages'1981 4,242,603'Dynamic storage element'1980 4,190,850'MIS field effect transistor having a short channel length'1980 4,185,293'Opto-electronic sensing apparatus and method'1980 4,101,922'Field effect transistor with a short channel length'1978 4,017,769'Integrated circuits and method of producing the same'1977 3,997,908'Schottky gate field effect transistor'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1976–2003Patents assigned to SIEMENS AG (68)· patent assignee history

1976–2001Based in Munich, DE· patent location history

1977Based in Neuried, DE· patent location history

1989–1991Based in Muenchen, DE· patent location history

1991Patents assigned to GANTIOLER JOSEF MATTHIAS (1)· patent assignee history

1991Patents assigned to TIHANYI JENOE (1)· patent assignee history

1996–2011Based in Kirchheim, DE· patent location history

2000–2011Patents assigned to INFINEON TECHNOLOGIES AG (49)· patent assignee history

2000–2004Based in Kircheim, DE· patent location history

2004Patents assigned to SICED ELECT DEV GMBH & CO KG (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SIEMENS AG	68	1976–2003
INFINEON TECHNOLOGIES AG	49	2000–2011
GANTIOLER JOSEF MATTHIAS	1	1991
SICED ELECT DEV GMBH & CO KG	1	2004
TIHANYI JENOEself	1	1991

Locations

Location	Patents	Span
Kirchheim, DE	80	1996–2011
Munich, DE	34	1976–2001
Kircheim, DE	3	2000–2004
Muenchen, DE	2	1989–1991
Neuried, DE	1	1977