Inventor
Matty Caymax
Inventor
Leuven, BE
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H01LSemiconductor devices12%
H10DInorganic electric semiconductor devices10%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation10%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution10%
Y02PClimate change mitigation technologies in the production or processing of goods10%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems8%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light8%
C23CCoating metallic material6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
9,984,874Method of producing transition metal dichalcogenide layer20189,431,519'Method of producing a III-V fin structure'20169,425,314'Passivated III-V or Ge fin-shaped field effect transistor'20169,218,964'Antiphase domain boundary-free III-V compound semiconductor material on semiconductor substrate and method for manufacturing thereof'20159,196,477'Semiconductor device and method'20159,028,623'Oxygen monolayer on a semiconductor'20158,962,369'Method for doping semiconductor structures and the semiconductor device thereof'20158,912,055'Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable thereby'20148,865,582'Method for producing a floating gate memory structure'20148,709,918'Method for selective deposition of a semiconductor material'20148,530,339'Method for direct deposition of a germanium layer'20138,507,337'Method for doping semiconductor structures and the semiconductor device thereof'20138,232,581'Method for manufacturing an III-V engineered substrate and the III-V engineered substrate thereof'20128,158,451'Method for manufacturing a junction'20128,007,865'Atomic layer deposition (ALD) method and reactor for producing a high quality layer'20117,579,285'Atomic layer deposition method for depositing a layer'20097,320,896'Infrared radiation detector'20087,176,111'Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof'20077,075,081'Method of fabrication of an infrared radiation detector and infrared detector device'20066,884,636'Method of fabrication of an infrared radiation detector and infrared detector device'20056,815,247'Thin-film opto-electronic device and a method of making it'20046,683,367'Thin-film opto-electronic device and a method of making it'20046,274,462'Method of fabrication of an infrared radiation detector and infrared detector device'20016,194,722'Method of fabrication of an infrared radiation detector and infrared detector device'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2008Patents assigned to IMEC INTER UNI MICRO ELECTR (7)· patent assignee history
2001–2018Based in Leuven, BE· patent location history
2004–2018Patents assigned to IMEC VZW (3)· patent assignee history
2009–2016Patents assigned to IMEC (14)· patent assignee history
2012–2015Patents assigned to CAYMAX MATTY (9)· patent assignee history
2012–2014Patents assigned to LOO ROGER (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IMEC | 14 | 2009–2016 |
| CAYMAX MATTYself | 9 | 2012–2015 |
| IMEC INTER UNI MICRO ELECTR | 7 | 2001–2008 |
| LOO ROGER | 5 | 2012–2014 |
| IMEC VZW | 3 | 2004–2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Leuven, BE | 24 | 2001–2018 |