Inventor

Naohito Kato

Inventor

Kariya, JP

Overview

17→

Patents

1991–2017

Patent span

Electricity

Primary field (CPC H)

Patents· 17 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices52%

F02PIgnition, other than compression ignition, for internal-combustion engines8%

H05BElectric heating8%

Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications8%

B60QArrangement of signalling or lighting devices, the mounting or supporting thereof or circuits therefor, for vehicles in general4%

F21SNon-portable lighting devices4%

F21YIndexing scheme associated with subclasses f21k, f21l, f21s and f21v, relating to the form or the kind of the light sources or of the colour of the light emitted4%

H03KPulse technique4%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%

PatentTitleYear

9,815,400'Headlight control device and headlight'2017 9,783,097'Headlight control device and headlight'2017 7,800,174'Power semiconductor switching-device and semiconductor power module using the device'2010 7,755,295'Vehicle head lamp device'2010 6,452,219'Insulated gate bipolar transistor and method of fabricating the same'2002 6,281,546'Insulated gate field effect transistor and manufacturing method of the same'2001 5,973,338'Insulated gate type bipolar-transistor'1999 5,723,882'Insulated gate field effect transistor having guard ring regions'1998 5,719,412'Insulated gate bipolar transistor'1998 5,621,234'Vertical semiconductor device with breakdown voltage improvement region'1997 5,609,145'Internal combustion engine ignition system'1997 5,519,245'Insulated gate bipolar transistor with reverse conducting current'1996 5,510,634'Insulated gate bipolar transistor'1996 5,475,258'Power semiconductor device with protective element'1995 5,464,992'Insulated gate bipolar transistor provided with a minority carrier extracting layer'1995 5,169,793'Method of making an insulated gate bipolar transistor having gate shield region'1992 4,994,880'Semiconductor device constituting bipolar transistor'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–1999Patents assigned to NIPPON DENSO CO (11)· patent assignee history

1991Based in Chiryu, JP· patent location history

1992–2017Based in Kariya, JP· patent location history

1998Based in Aichi, JP· patent location history

2001–2017Patents assigned to DENSO CORP (5)· patent assignee history

2017Patents assigned to TOYOTA MOTOR CO LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
NIPPON DENSO CO	11	1991–1999
DENSO CORP	5	2001–2017
TOYOTA MOTOR CO LTD	1	2017

Locations

Location	Patents	Span
Kariya, JP	15	1992–2017
Aichi, JP	1	1998
Chiryu, JP	1	1991