Inventor
Luc Thomas
Inventor
San Jose, CA, US
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores23%
H10NElectric solid-state devices not otherwise provided for15%
H01LSemiconductor devices13%
H01FMagnets12%
H10BElectronic memory devices8%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
G01NInvestigating or analysing materials by determining their chemical or physical properties5%
G01RMeasuring electric variables5%
B82YSpecific uses or applications of nanostructures4%
B24BMachines, devices, or processes for grinding or polishing1%
PatentTitleYear
10,950,782Nitride diffusion barrier structure for spintronic applications202110,797,225Dual magnetic tunnel junction (DMTJ) stack design202010,788,561Method for measuring saturation magnetization of magnetic films and multilayer stacks202010,761,154Ferromagnetic resonance (FMR) electrical testing apparatus for spintronic devices202010,754,000Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level characterization of magnetic films202010,658,577Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy202010,522,746Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)201910,475,564Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation201910,431,736Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy201910,401,464Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayers201910,115,892Multilayer structure for reducing film roughness in magnetic devices201810,014,465Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy20189,466,319'Perpendicular magnetic recording (PMR) write shield design with minimized wide adjacent track erasure (WATE)'20169,425,387'Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing'20168,934,289'Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction'20158,923,039'Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction'20148,767,432'Method and apparatus for controlled application of Oersted field to magnetic memory structure'20148,687,415'Domain wall motion in perpendicularly magnetized wires having artificial antiferromagnetically coupled multilayers with engineered interfaces'20148,638,601'Domain wall motion in perpendicularly magnetized wires having magnetic multilayers with engineered interfaces'20147,760,535'Sequence of current pulses for depinning magnetic domain walls'20107,667,994'Magnetic racetrack with current-controlled motion of domain walls within an undulating energy landscape'20107,626,844'Magnetic racetrack with current-controlled motion of domain walls within an undulating energy landscape'20097,492,622'Sequence of current pulses for depinning magnetic domain walls'20096,166,948'Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers'20004,285,044'Digital generator for producing a sinewave'1981Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1981Based in Paris, FR· patent location history
2000–2015Patents assigned to IBM (10)· patent assignee history
2000–2021Based in San Jose, CA, US· patent location history
2014Patents assigned to PARKIN STUART STEPHEN PAPWORTH (2)· patent assignee history
2014Patents assigned to THOMAS LUC (2)· patent assignee history
2016–2021Patents assigned to HEADWAY TECH INC (5)· patent assignee history
2019–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (9)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 10 | 2000–2015 |
| TAIWAN SEMICONDUCTOR MFG CO LTD | 9 | 2019–2020 |
| HEADWAY TECH INC | 5 | 2016–2021 |
| PARKIN STUART STEPHEN PAPWORTH | 2 | 2014 |
| THOMAS LUCself | 2 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 24 | 2000–2021 |
| Paris, FR | 1 | 1981 |