Inventor
MYUNGHOON JUNG
Inventor
US
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices31%
H01LSemiconductor devices25%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1025%
B82YSpecific uses or applications of nanostructures13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
PatentTitleYear
12,593,674Semiconductor transistor device including backside contact structure vertically between backside power rail and source/drain structure and method of forming thereof202612,588,489Integrated circuit devices including stacked elements and methods of forming the same202612,463,136Integrated circuit devices including backside power rail and methods of forming the same202512,255,248Semiconductor device including backside contact structure having positive slope and method of forming thereof202512,211,837Semiconductor device including gate contact structure formed from gate structure2025Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2025–2026Patents assigned to SAMSUNG ELECTRONICS CO LTD (5)· patent assignee history
2025–2026Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 5 | 2025–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 5 | 2025–2026 |