Inventor

Mark A. Jaso

Inventor
Manassas, VA, US

Overview

26→
Patents
1991–2012
Patent span
Electricity
Primary field (CPC H)

Patents· 26 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1024%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10DInorganic electric semiconductor devices11%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests11%
H10BElectronic memory devices8%
B24BMachines, devices, or processes for grinding or polishing3%
C09KMaterials for miscellaneous applications, not provided for elsewhere3%
C23CCoating metallic material3%
G02BOptical elements, systems or apparatus3%
H01JElectric discharge tubes or discharge lamps3%
PatentTitleYear
8,192,638'Method for manufacturing multiple layers of waveguides'20127,974,505'Method for fabricating selectively coupled optical waveguides on a substrate'20116,974,524'Apparatus, method and system for monitoring chamber parameters associated with a deposition process'20056,811,657'Device for measuring the profile of a metal film sputter deposition target, and system and method employing same'20046,632,377'Chemical-mechanical planarization of metallurgy'20036,344,409'Dummy patterns for aluminum chemical polishing (CMP)'20026,186,864'Method and apparatus for monitoring polishing pad wear during processing'20016,177,348'Low temperature via fill using liquid phase transport'20016,166,423'Integrated circuit having a via and a capacitor'20006,153,474'Method of controllably forming a LOCOS oxide layer over a portion of a vertically extending sidewall of a trench extending into a semiconductor substrate'20006,136,686'Fabrication of interconnects with two different thicknesses'20006,114,248'Process to reduce localized polish stop erosion'20006,107,125'SOI/bulk hybrid substrate and method of forming the same'20006,093,631'Dummy patterns for aluminum chemical polishing (CMP)'20006,045,434'Method and apparatus of monitoring polishing pad wear during processing'20006,025,226'Method of forming a capacitor and a capacitor formed using the method'20005,894,152'SOI/bulk hybrid substrate and method of forming the same'19995,885,899'Method of chemically mechanically polishing an electronic component using a non-selective ammonium hydroxide slurry'19995,854,140'Method of making an aluminum contact'19985,795,826'Method of chemically mechanically polishing an electronic component'19985,726,099'Method of chemically mechanically polishing an electronic component using a non-selective ammonium persulfate slurry'19985,656,535'Storage node process for deep trench-based DRAM'19975,573,633'Method of chemically mechanically polishing an electronic component'19965,264,387'Method of forming uniformly thin, isolated silicon mesas on an insulating substrate'19935,246,884'CVD diamond or diamond-like carbon for chemical-mechanical polish etch stop'19935,055,158'Planarization of Josephson integrated circuit'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–2003Patents assigned to IBM (22)· patent assignee history
1991–2000Based in Yorktown Heights, NY, US· patent location history
1997–2002Patents assigned to SIEMENS AG (4)· patent assignee history
1999–2002Based in Manassas, VA, US· patent location history
2000–2012Based in Fairfax Station, VA, US· patent location history
2004–2005Patents assigned to MICRON TECHNOLOGY INC (2)· patent assignee history
2011–2012Patents assigned to BAE SYS INF & ELECT SYS INTEG (2)· patent assignee history
2012Patents assigned to CONWAY TIMOTHY J (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
IBM221991–2003
SIEMENS AG41997–2002
BAE SYS INF & ELECT SYS INTEG22011–2012
MICRON TECHNOLOGY INC22004–2005
CONWAY TIMOTHY J12012
Locations
LocationPatentsSpan
Manassas, Virginia, US101999–2002
Yorktown Heights, New York, US101991–2000
Fairfax Station, Virginia, US62000–2012