Inventor

Tohru Takiguchi

Inventor
Tokyo, JP

Overview

27→
Patents
1993–2015
Patent span
Electricity
Primary field (CPC H)

Patents· 27 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light50%
B82YSpecific uses or applications of nanostructures16%
G02BOptical elements, systems or apparatus6%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein6%
H04BTransmission4%
H04JMultiplex communication4%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
H10DInorganic electric semiconductor devices2%
H10HInorganic light-emitting semiconductor devices having potential barriers2%
PatentTitleYear
9,147,997'Optical semiconductor device'20159,042,008'Optical semiconductor device'20158,792,756'Optical semiconductor device'20148,233,515'Optical waveguide integrated semiconductor optical device'20127,835,413'Semiconductor laser'20107,720,123'Buried type semiconductor laser'20107,675,954'Semiconductor laser device'20107,504,664'Semiconductor optical device having an improved current blocking layer and manufacturing method thereof'20097,187,701'Ridge waveguide semiconductor laser'20076,768,760'Ridge-waveguide semiconductor laser device'20046,741,630'Ridge waveguide distributed feedback laser'20046,674,784'Distributed feedback laser device and method for manufacturing the same'20046,642,075'Method for manufacturing semiconductor laser device'20036,618,411'Semiconductor laser element'20036,583,510'Semiconductor device with varying thickness gold electrode'20036,455,338'Method of manufacturing an integrated semiconductor laser-modulator device'20026,277,663'Method of producing semiconductor laser diode'20016,026,106'Composite optical device'20005,991,322'Semiconductor optical device'19995,771,257'Light absorption modulator and integrated semiconductor laser and modulator'19985,763,287'Method of fabricating semiconductor optical device'19985,671,242'Strained quantum well structure'19975,544,188'Semiconductor laser device having a high emission efficiency and a large modulation bandwidth'19965,459,747'Semiconductor optical devices'19955,452,383'Optical switch and method for producing the optical switch'19955,198,370'Method for producing an infrared detector'19935,187,378'Photodetector'1993

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1993–2015Patents assigned to MITSUBISHI ELECTRIC CORP (27)· patent assignee history
1993–1999Based in Itami, JP· patent location history
1998–2015Based in Tokyo, JP· patent location history
2012–2014Patents assigned to TAKIGUCHI TOHRU (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MITSUBISHI ELECTRIC CORP271993–2015
TAKIGUCHI TOHRUself22012–2014
Locations
LocationPatentsSpan
Tokyo, JP201998–2015
Itami, JP71993–1999