Inventor

Kazuaki Ohmi

Inventor

Yokohama, JP

Overview

37→

Patents

1982–2011

Patent span

Electricity

Primary field (CPC H)

Patents· 37 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1031%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests14%

Y10TTechnical subjects covered by former us classification11%

C23CCoating metallic material4%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%

G01NInvestigating or analysing materials by determining their chemical or physical properties3%

H10DInorganic electric semiconductor devices3%

B03CMagnetic or electrostatic separation of solid materials from solid materials or fluids1%

PatentTitleYear

8,035,668'Exposure apparatus and device manufacturing method'2011 7,579,257'Sample separating apparatus and method, and substrate manufacturing method'2009 7,077,901'Process for producing single crystal silicon wafers'2006 6,979,629'Method and apparatus for processing composite member'2005 6,971,432'Sample processing system'2005 6,900,114'Separating apparatus, separating method, and method of manufacturing semiconductor substrate'2005 6,746,559'Method and apparatus for separating composite member using fluid'2004 6,672,358'Sample processing system'2004 6,656,271'Method of manufacturing semiconductor wafer method of using and utilizing the same'2003 6,653,206'Method and apparatus for processing composite member'2003 6,653,205'Composite member separating method, thin film manufacturing method, and composite member separating apparatus'2003 6,629,539'Sample processing system'2003 6,624,047'Substrate and method of manufacturing the same'2003 6,609,446'Separating apparatus, separating method, and method of manufacturing semiconductor substrate'2003 6,605,518'Method of separating composite member and process for producing thin film'2003 6,597,039'Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof'2003 6,527,031'Sample separating apparatus and method, and substrate manufacturing method'2003 6,475,323'Method and apparatus for separating composite member using fluid'2002 6,468,923'Method of producing semiconductor member'2002 6,426,270'Substrate processing method and method of manufacturing semiconductor substrate'2002 6,391,743'Method and apparatus for producing photoelectric conversion device'2002 6,382,292'Method and apparatus for separating composite member using fluid'2002 6,376,332'Composite member and separating method therefor, bonded substrate stack and separating method therefor, transfer method for transfer layer, and SOI substrate manufacturing method'2002 6,342,433'Composite member its separation method and preparation method of semiconductor substrate by utilization thereof'2002 6,140,209'Process for forming an SOI substrate'2000 6,127,692'Photoelectric conversion apparatus'2000 6,025,243'Method for preparing a semiconductor device'2000 5,776,255'Chemical vapor deposition apparatus'1998 5,723,034'Process for forming hydrogenated amorphous silicon film'1998 5,723,877'Photoelectric conversion apparatus'1998 5,563,092'Method of producing a substrate for an amorphous semiconductor'1996 5,500,102'Method of forming deposited semiconductor film'1996 5,182,253'Purification apparatus for superconductor fine particles'1993 5,154,949'Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride'1992 5,134,092'Process for forming deposited film and process for producing semiconductor device'1992 4,931,692'Luminescing member, process for preparation thereof, and electroluminescent device employing same'1990 4,315,980'Electrophotographic member with metallocene containing overlayer'1982

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1982Patents assigned to FUJI XEROX CO LTD (1)· patent assignee history

1990–2011Patents assigned to CANON KK (35)· patent assignee history

1990–2000Based in Hadano, JP· patent location history

1996–2011Based in Yokohama, JP· patent location history

2003–2005Based in Kanagawa, JP· patent location history

2003Based in Saitama-shi, JP· patent location history

2006Based in Kyoto, JP· patent location history

2009Patents assigned to CANON KABUHSIKI KAISHA (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
CANON KK	35	1990–2011
CANON KABUHSIKI KAISHA	1	2009
FUJI XEROX CO LTD	1	1982

Locations

Location	Patents	Span
Yokohama, JP	24	1996–2011
Hadano, JP	7	1990–2000
Kanagawa, JP	3	2003–2005
Kyoto, JP	1	2006
Saitama-shi, JP	1	2003