LexDanaLexDanabeta
Inventor

HAU-YU LIN

Inventor
TW

Overview

4→
Patents
2022–2024
Patent span
Electricity
Primary field (CPC H)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices40%
H10DInorganic electric semiconductor devices40%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
PatentTitleYear
11,908,749Method of metal gate formation and structures formed by the same202411,854,898Wrap-around contact on FinFET202311,508,627Method of metal gate formation and structures formed by the same202211,362,000Wrap-around contact on FinFET2022

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2022–2024Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (4)· patent assignee history
2022–2024Based in TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD42022–2024
Locations
LocationPatentsSpan
TW42022–2024