Inventor
Shiro Tsukamoto
Inventor
Ibaraki, JP
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material20%
H01JElectric discharge tubes or discharge lamps13%
C22CAlloys9%
C22FChanging the physical structure of non-ferrous metals and non-ferrous alloys9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H10DInorganic electric semiconductor devices5%
B82YSpecific uses or applications of nanostructures4%
B21JForging3%
B23KSoldering or unsoldering3%
C30BSingle-crystal growth3%
PatentTitleYear
10,781,024Method for vacuum packing high-purity tin and vacuum-packed high purity tin202010,431,438Titanium target for sputtering and manufacturing method thereof201910,167,547Gadolinium sputtering target and production method of said target201910,006,117Sputtering target-backing plate assembly and method for producing same20189,711,336'Backing plate-integrated metal sputtering target and method of producing same'20179,666,418'Titanium target for sputtering'20179,536,715'Recycling method for tantalum coil for sputtering and tantalum coil obtained by the recycling method'20179,530,628'Titanium target for sputtering'20169,382,612'Lanthanum target for sputtering'20169,371,578'Tantalum coil for sputtering and method for processing the coil'20169,347,130'Lanthanum target for sputtering'20169,328,411'Ytterbium sputtering target and method of producing said target'20169,068,258'Titanium target for sputtering'20158,728,255'Pot-shaped copper sputtering target and manufacturing method thereof'20148,663,440'Titanium target for sputtering'20148,183,073'Method of manufacturing a semiconductor device with quantum dots formed by self-assembled growth'20127,951,275'Sputtering target and method for finishing surface of such target'20117,892,871'Method of manufacturing semiconductor device with quantum dots formed by self-assembled growth'20117,122,848'Substrate bonded transition metal catalyst and method for preparation thereof'20066,383,286'Method of making semiconductor super-atom and aggregate thereof'20026,074,485'Crystal growth observing apparatus using a scanning tunneling microscope'20005,062,140'Induction speaker'1991D0318287'Portable electronic calculator'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991Based in Kanagawa, JP· patent location history
1991Based in Osaka, JP· patent location history
2000–2020Based in Ibaraki, JP· patent location history
2011–2020Patents assigned to JX NIPPON MINING & METALS CORP (16)· patent assignee history
2011–2012Patents assigned to FUJITSU LTD (2)· patent assignee history
2011–2012Based in Tokushima, JP· patent location history
2012–2019Patents assigned to TSUKAMOTO SHIRO (13)· patent assignee history
2014–2016Patents assigned to OTSUKI TOMIO (3)· patent assignee history
2015–2017Patents assigned to MAKINO NOBUHITO (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| JX NIPPON MINING & METALS CORP | 16 | 2011–2020 |
| TSUKAMOTO SHIROself | 13 | 2012–2019 |
| MAKINO NOBUHITO | 3 | 2015–2017 |
| OTSUKI TOMIO | 3 | 2014–2016 |
| FUJITSU LTD | 2 | 2011–2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ibaraki, JP | 19 | 2000–2020 |
| Tokushima, JP | 2 | 2011–2012 |
| Kanagawa, JP | 1 | 1991 |
| Osaka, JP | 1 | 1991 |