Inventor
Ming Sun
Inventor
Eden Prairie, MN, US
Overview
Patents· 53 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for17%
H10DInorganic electric semiconductor devices16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10BElectronic memory devices10%
G11CStatic stores8%
B82YSpecific uses or applications of nanostructures6%
B23KSoldering or unsoldering4%
G11BInformation storage based on relative movement between record carrier and transducer4%
Y10TTechnical subjects covered by former us classification3%
G10LSpeech analysis techniques or speech synthesis3%
PatentTitleYear
11,132,990Wakeword and acoustic event detection202111,069,352Media presence detection202111,069,353Multilingual wakeword detection20219,343,306'Method of fabricating thin film transistor array substrate having polysilicon with different grain sizes'20168,999,118'Formation of non-magnetic grooves'20158,940,577'Programmable metallization cells and methods of forming the same'20158,884,304'Thin film transistor array substrate having polysilicon'20148,772,122'Programmable metallization memory cell with layered solid electrolyte structure'20148,564,910'Magnetic shield structure'20138,487,291'Programmable metallization memory cell with layered solid electrolyte structure'20138,456,903'Magnetic memory with porous non-conductive current confinement layer'20138,446,752'Programmable metallization cell switch and memory units containing the same'20138,435,827'Programmable resistive memory cell with sacrificial metal'20138,435,399'Formation of patterned media by selective anodic removal followed by targeted trench backfill'20138,399,908'Programmable metallization memory cells via selective channel forming'20138,377,760'Thin film transistor'20138,343,801'Method of forming a programmable metallization memory cell'20138,334,165'Programmable metallization memory cells via selective channel forming'20128,309,945'Programmable metallization memory cell with planarized silver electrode'20128,293,571'Programmable metallization cells and methods of forming the same'20128,289,751'Non-volatile memory cell with programmable unipolar switching element'20128,288,254'Programmable metallization memory cell with planarized silver electrode'20128,286,333'Method of manufacturing a magnetic head'20128,288,753'Programmable resistive memory cell with oxide layer'20128,248,836'Non-volatile memory cell stack with dual resistive elements'20128,198,149'Method for fabricating active device array substrate'20128,154,023'Low temperature polysilicon thin film transistor'20128,143,117'Active device array substrate and method for fabricating the same'20128,134,138'Programmable metallization memory cell with planarized silver electrode'20128,119,465'Thin film transistor and method for fabricating the same'20128,097,902'Programmable metallization memory cells via selective channel forming'20128,097,874'Programmable resistive memory cell with sacrificial metal'20128,093,592'Thin film transistor substrate, electronic apparatus, and methods for fabricating the same'20128,058,646'Programmable resistive memory cell with oxide layer'20118,049,337'Substrate and manufacturing method of package structure'20117,974,117'Non-volatile memory cell with programmable unipolar switching element'20117,902,010'Mask for sequential lateral solidification (SLS) process and a method for crystallizing amorphous silicon by using the same'20117,902,554'Polysilicon film having smooth surface and method of forming the same'20117,871,907'Mask and method of fabricating a polysilicon layer using the same'20117,857,907'Methods of forming silicon nanocrystals by laser annealing'20107,842,938'Programmable metallization cells and methods of forming the same'20107,826,181'Magnetic memory with porous non-conductive current confinement layer'20107,777,989'Magnetic writer including an electroplated high moment laminated pole'20107,750,386'Memory cells including nanoporous layers containing conductive material'20107,745,826'Thin film transistor substrate, electronic apparatus, and methods for fabricating the same'20107,740,993'Mask for sequential lateral solidification (SLS) process and a method for crystallizing amorphous silicon by using the same'20107,666,767'Mask for sequential lateral solidification (SLS) process and a method thereof'20107,473,498'Mask and method of manufacturing a poly-silicon layer using the same'20097,410,878'Polysilicon film having smooth surface and method of forming the same'20087,335,540'Low temperature polysilicon thin film transistor and method of manufacturing the same'20087,241,650'Method of manufacturing a polysilicon layer and a mask used therein'20076,992,017'Process for cleaning silicon surface and fabrication of thin film transistor by the process'20066,818,319'Diffusion barrier multi-layer structure for thin film transistor liquid crystal displays and process for fabricating thereof'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2016Patents assigned to AU OPTRONICS CORP (21)· patent assignee history
2004–2011Based in Kaohsiung, TW· patent location history
2008–2016Based in Hsinchu County, TW· patent location history
2010–2015Patents assigned to SEAGATE TECHNOLOGY LLC (28)· patent assignee history
2010–2015Based in Eden Prairie, MN, US· patent location history
2010–2011Based in Jhubei City, TW· patent location history
2011–2015Patents assigned to SUN MING (21)· patent assignee history
2011–2013Patents assigned to AMIN NURUL (8)· patent assignee history
2011–2013Patents assigned to JIN INSIK (7)· patent assignee history
2021Based in Winchester, MA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEAGATE TECHNOLOGY LLC | 28 | 2010–2015 |
| AU OPTRONICS CORP | 21 | 2004–2016 |
| SUN MINGself | 21 | 2011–2015 |
| AMIN NURUL | 8 | 2011–2013 |
| JIN INSIK | 7 | 2011–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Eden Prairie, Minnesota, US | 26 | 2010–2015 |
| Hsinchu County, TW | 11 | 2008–2016 |
| Kaohsiung, TW | 6 | 2004–2011 |
| Winchester, Massachusetts, US | 3 | 2021 |
| Jhubei City, TW | 3 | 2010–2011 |