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Inventor

Robert L. Wourms

Inventor
Santa Clara, CA, US

Overview

2→
Patents
1982
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1040%
H10DInorganic electric semiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests20%
PatentTitleYear
4,361,599'Method of forming plasma etched semiconductor contacts'19824,347,654'Method of fabricating a high-frequency bipolar transistor structure utilizing permeation-etching'1982

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1982Patents assigned to NAT SEMICONDUCTOR CORP (2)· patent assignee history
1982Based in Santa Clara, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NAT SEMICONDUCTOR CORP21982
Locations
LocationPatentsSpan
Santa Clara, California, US21982