Inventor
Yoshifumi Yatsurugi
Inventor
Fujisawa, JP
Overview
Patents· 13 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material26%
C01BNon-metallic elements23%
C30BSingle-crystal growth16%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%
Y10TTechnical subjects covered by former us classification10%
B01DSeparation3%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry3%
B28DWorking stone or stone-like materials3%
C07CAcyclic or carbocyclic compounds3%
PatentTitleYear
6,623,801'Method of producing high-purity polycrystalline silicon'20036,503,563'Method of producing polycrystalline silicon for semiconductors from saline gas'2003RE036936'Production of high-purity polycrystalline silicon rod for semiconductor applications'20006,106,617'Apparatus for feeding raw material into a quartz crucible'20006,019,842'Method and apparatus for loading raw material into a quartz crucible'20006,007,621'Apparatus for feeding raw material into a quartz crucible and method of feeding the same'19995,545,387'Production of high-purity polycrystalline silicon rod for semiconductor applications'19965,478,396'Production of high-purity polycrystalline silicon rod for semiconductor applications'19954,857,270'Process for manufacturing silicon-germanium alloys'19894,565,913'Method for the disintegration of silicon for semiconductor'19864,150,168'Method and apparatus for manufacturing high-purity silicon rods'19794,147,814'Method of manufacturing high-purity silicon rods having a uniform sectional shape'19793,982,912'Method for preparation of an improved K-A type zeolite and for separation by adsorption polar and non-polar molecules'1976Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1976Based in Tsujido Fujisawa-shi, JP· patent location history
1979–2003Patents assigned to KOMATSU MFG CO LTD (4)· patent assignee history
1979–2003Based in Fujisawa, JP· patent location history
1986–2000Patents assigned to KOMATSU DENSHI KINZOKU KK (4)· patent assignee history
1995–2000Patents assigned to ADVANCED SILICON MATERIALS INC (2)· patent assignee history
1995–1996Based in Moses Lake, WA, US· patent location history
1996Patents assigned to ADVANCED SILCON MATERIALS INC (1)· patent assignee history
1999–2000Based in Kanagawa, JP· patent location history
2000Patents assigned to KOMATSU ELECTRONICS METALS CO (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| KOMATSU DENSHI KINZOKU KK | 4 | 1986–2000 |
| KOMATSU MFG CO LTD | 4 | 1979–2003 |
| ADVANCED SILICON MATERIALS INC | 2 | 1995–2000 |
| ADVANCED SILCON MATERIALS INC | 1 | 1996 |
| KOMATSU ELECTRONICS METALS CO | 1 | 2000 |
Locations
| Location | Patents | Span |
|---|---|---|
| Fujisawa, JP | 8 | 1979–2003 |
| Kanagawa, JP | 2 | 1999–2000 |
| Moses Lake, Washington, US | 2 | 1995–1996 |
| Tsujido Fujisawa-shi, JP | 1 | 1976 |