Inventor
YOUSEOK SUH
Inventor
US
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices31%
H10DInorganic electric semiconductor devices31%
H10BElectronic memory devices15%
B82YSpecific uses or applications of nanostructures8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
PatentTitleYear
11,950,412Gate fringing effect based channel formation for semiconductor device202411,901,434Semiconductor having a source/drain contact with a single inner spacer202411,444,201Leakage current reduction in polysilicon-on-active-edge structures202211,251,189Gate fringing effect based channel formation for semiconductor device2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2024Patents assigned to Longitude Flash Memory Solutions Ltd (2)· patent assignee history
2022–2024Patents assigned to QUALCOMM INC (2)· patent assignee history
2022–2024Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| Longitude Flash Memory Solutions Ltd | 2 | 2022–2024 |
| QUALCOMM INC | 2 | 2022–2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 4 | 2022–2024 |