Inventor
Charles R. Spinner, III
Inventor
Dallas, TX, US
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1027%
H10DInorganic electric semiconductor devices25%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests20%
H10BElectronic memory devices16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
PatentTitleYear
7,534,719'Method for reduction in metal dishing after CMP'20097,372,160'Barrier film deposition over metal for reduction in metal dishing after CMP'20086,455,412'Semiconductor contact via structure and method'20026,037,623'Polycrystalline silicon resistors for integrated circuits'20006,010,959'Method of improving photoresist adhesion on a dielectric layer'20005,825,060'Polycrystalline silicon resistors for intergrated circuits'19985,627,104'Method to improve interlevel dielectric planarization using SOG'19975,594,269'Resistive load for integrated circuit devices'19975,593,920'Method for forming contact structures in integrated circuits'19975,462,894'Method for fabricating a polycrystalline silicon resistive load element in an integrated circuit'19955,331,117'Method to improve interlevel dielectric planarization'19945,331,116'Structure and method for forming contact structures in integrated circuits'19945,321,211'Integrated circuit via structure'19945,268,325'Method for fabricating a polycrystalline silicon resistive load element in an integrated circuit'19935,151,376'Method of making polycrystalline silicon resistors for integrated circuits'19925,146,309'Method for forming polycrystalline silicon contacts'19925,070,391'Semiconductor contact via structure and method'19915,068,201'Method for forming a high valued resistive load element and low resistance interconnect for integrated circuits'19915,059,554'Method for forming polycrystalline silicon contacts'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–1998Patents assigned to SGS THOMSON MICROELECTRONICS (14)· patent assignee history
1991–2002Based in Dallas, TX, US· patent location history
2000–2009Patents assigned to ST MICROELECTRONICS INC (5)· patent assignee history
2008–2009Based in Phoenix, AZ, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SGS THOMSON MICROELECTRONICS | 14 | 1991–1998 |
| ST MICROELECTRONICS INC | 5 | 2000–2009 |
Locations
| Location | Patents | Span |
|---|---|---|
| Dallas, Texas, US | 17 | 1991–2002 |
| Phoenix, AZ, US | 2 | 2008–2009 |