LexDanaLexDanabeta
Inventor

Masashi Naito

Inventor
Kodaira, JP

Overview

30→
Patents
1998–2016
Patent span
Physics
Primary field (CPC G)

Patents· 30 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G06Fprimary
G06FElectric digital data processing36%
G11CStatic stores30%
H04LTransmission of digital information, e.g. telegraphic communication18%
H04BTransmission7%
G01RMeasuring electric variables2%
H03CModulation2%
H03FAmplifiers2%
H03GControl of amplification2%
PatentTitleYear
RE045857'External storage device and memory access control method thereof'20169,007,830'Semiconductor memory device having faulty cells'20158,503,235'Nonvolatile memory with faulty cell registration'20138,467,471'Coding and modulation selecting method and wireless communication equipment'20138,451,923'MIMO transmission mode selecting method and wireless communication equipment'20138,111,778'Method for suppressing peak power of orthogonally multiplex signal, peak power suppressing circuit, and transmitter'20128,064,257'Semiconductor memory device having faulty cells'20117,953,179'Peak suppressing OFDM transmitter'20117,721,165'External storage device and memory access control method thereof'20107,696,761'Spectrum analyzing method, distortion detector and distortion compensation amplifying device'20107,616,485'Semiconductor memory device having faulty cells'20097,529,313'Distortion compensation quadrature modulator and radio transmitter'20097,418,070'Signal generator'20087,234,087'External storage device and memory access control method thereof'20077,042,935'Equalizer and equalization method'20066,999,788'Radio transmitter that determines proper standard'20066,888,393'Amplitude limiting apparatus and multi-carrier signal generating apparatus'20056,728,138'Semiconductor memory device having faulty cells'20046,701,471'External storage device and memory access control method thereof'20046,694,460'Semiconductor memory device having deterioration determining function'20046,662,002'Frequency conversion circuit and transmitter'20036,542,405'Semiconductor memory device having faulty cells'20036,388,920'Semiconductor memory device having faulty cells'20026,317,371'Storage device with an error correction unit and an improved arrangement for accessing and transferring blocks of data stored in a non-volatile semiconductor memory'20016,236,601'Semiconductor memory device having faulty cells'20016,223,311'Semiconductor memory device having deterioration determining function'20016,199,187'External storage device and memory access control method thereof'20016,031,758'Semiconductor memory device having faulty cells'20005,978,941'Semiconductor memory device having deterioration determining function'19995,732,208'External storage device and memory access control method thereof'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2004Patents assigned to HITACHI LTD (10)· patent assignee history
1998–2016Based in Yokohama, JP· patent location history
2000–2015Based in Kodaira, JP· patent location history
2003–2013Patents assigned to HITACHI INT ELECTRIC INC (11)· patent assignee history
2003–2010Based in Tokyo, JP· patent location history
2009–2016Patents assigned to SOLID STATE STORAGE SOLUTIONS (6)· patent assignee history
2011–2016Patents assigned to NAITO MASASHI (6)· patent assignee history
2011–2016Patents assigned to KATAYAMA KUNIHIRO (3)· patent assignee history
2012–2013Based in Hachioji, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI INT ELECTRIC INC112003–2013
HITACHI LTD101998–2004
NAITO MASASHIself62011–2016
SOLID STATE STORAGE SOLUTIONS62009–2016
KATAYAMA KUNIHIRO32011–2016
Locations
LocationPatentsSpan
Kodaira, JP112000–2015
Yokohama, JP91998–2016
Tokyo, JP72003–2010
Hachioji, JP32012–2013