Inventor
Shuji Nakamura
Inventor
Santa Barbara, CA, US
Overview
Patents· 329 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers17%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
G06FElectric digital data processing9%
B82YSpecific uses or applications of nanostructures8%
C30BSingle-crystal growth7%
H10DInorganic electric semiconductor devices4%
H01LSemiconductor devices4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
PatentTitleYear
11,045,073Flexible tube insertion apparatus202110,863,884Flexible tube insertion apparatus comprising insertion section to be inserted into subject and method of operating thereof202010,685,835III-nitride tunnel junction with modified P-N interface202010,660,504Flexible tube insertion apparatus202010,658,557Transparent light emitting device with light emitting diodes202010,644,213Filament LED light bulb202010,593,854Transparent light emitting device with light emitting diodes202010,529,892Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices202010,517,461Flexible tube insertion apparatus201910,495,268High intensity solid state white emitter which is laser driven and uses single crystal, ceramic or polycrystalline phosphors201910,485,410Flexible tube insertion apparatus201910,454,010Transparent light emitting diodes201910,446,714Highly efficient gallium nitride based light emitting diodes via surface roughening201910,410,806Reaction force generating member for a key switch device201910,384,656Vehicle operation pedal device201910,217,916Transparent light emitting diodes201910,205,300Gallium and nitrogen containing laser diode dazzling devices and methods of use201910,186,835Monolithic integration of optically pumped III-nitride devices20199,951,912Tunable white light based on polarization sensitive light-emitting diodes20189,917,422'Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-direction'20189,859,464'Lighting emitting diode with light extracted from front and back sides of a lead frame'20189,828,695Planar nonpolar group-III nitride films grown on miscut substrates20179,793,435'Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices'20179,773,704'Method for the reuse of gallium nitride epitaxial substrates'20179,741,507'Key switch device and keyboard'20179,689,419'Temporary attachment and a holder for a member to be held'20179,640,947'Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser'20179,551,088'Method for growing group III-nitride crystals in supercritical ammonia using an autoclave'20179,513,825'Storage system having a channel control function using a plurality of processors'20169,515,240'Optical designs for high-efficacy white-light emitting diodes'20169,495,105'System managing a plurality of flash memory devices'20169,396,943'Method for the reuse of gallium nitride epitaxial substrates'20169,356,431'High power blue-violet III-nitride semipolar laser diodes'20169,340,899'Planar nonpolar group-III nitride films grown on miscut substrates'20169,298,271'Mounting device and electronic apparatus'20169,251,063'Storage system including a plurality of flash memory devices'20169,250,044'Gallium and nitrogen containing laser diode dazzling devices and methods of use'20169,243,344'Gallium nitride bulk crystals and their growth method'20169,240,529'Textured phosphor conversion layer light emitting diode'20169,231,376'Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices'20169,219,205'Optical designs for high-efficacy white-light emitting diodes'20159,159,553'Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface'20159,147,733'Method for the reuse of gallium nitride epitaxial substrates'20159,133,564'Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other'20159,136,673'Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser'20159,130,119'Non-polar and semi-polar light emitting devices'20159,077,151'Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction'20159,054,498'(Al,Ga,In)N diode laser fabricated at reduced temperature'20159,040,326'High light extraction efficiency nitride based light emitting diode by surface roughening'20159,040,327'Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes'20158,956,896'Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices'20158,882,935'Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition'20148,866,126'Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations'20148,866,149'Method for the reuse of gallium nitride epitaxial substrates'20148,860,051'Textured phosphor conversion layer light emitting diode'20148,853,669'Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning'20148,847,249'Solid-state optical device having enhanced indium content in active regions'20148,843,703'Storage system having a channel control function using a plurality of processors'20148,841,691'Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays'20148,835,959'Transparent light emitting diodes'20148,835,200'High light extraction efficiency nitride based light emitting diode by surface roughening'20148,809,867'Dislocation reduction in non-polar III-nitride thin films'20148,795,430'Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates'20148,795,440'Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)'20148,790,943'(Al,Ga,In)N diode laser fabricated at reduced temperature'20148,791,000'Planar nonpolar group-III nitride films grown on miscut substrates'20148,779,308'Key switch device and keyboard'20148,772,758'Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N'20148,772,792'LED with surface roughening'20148,766,296'Highly efficient gallium nitride based light emitting diodes via surface roughening'20148,761,218'Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes'20148,762,995'Computing system, method of controlling the same, and system management unit which plan a data migration according to a computation job execution schedule'20148,759,705'Push button-type switch device'20148,729,671'Method for increasing the area of non-polar and semi-polar nitride substrates'20148,726,755'Shift device'20148,709,925'Method for conductivity control of (Al,In,Ga,B)N'20148,709,371'Method for growing group III-nitride crystals in supercritical ammonia using an autoclave'20148,692,105'III-V nitride-based thermoelectric device'20148,691,671'Planar nonpolar group-III nitride films grown on miscut substrates'20148,686,466'Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices'20148,686,397'Low droop light emitting diode structure on gallium nitride semipolar substrates'20148,679,876'Laser diode and method for fabricating same'20148,674,375'Roughened high refractive index layer/LED for high light extraction'20148,653,503'Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys'20148,647,967'Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same'20148,642,993'Nonpolar III-nitride light emitting diodes with long wavelength emission'20148,641,823'Reactor designs for use in ammonothermal growth of group-III nitride crystals'20148,643,036'Semiconductor light-emitting device'20148,637,334'High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution'20148,631,199'Storage system, storage device, and control method thereof'20148,624,140'Key switch and keyboard'20148,624,281'Optical designs for high-efficacy white-light emitting diodes'20148,592,841'Nitride semiconductor device'20138,592,802'(Al, In, Ga, B)N device structures on a patterned substrate'20138,588,260'Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers'20138,574,525'Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals'20138,541,794'Nitride semiconductor light-emitting devices'20138,541,869'Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates'20138,541,788'LED with current confinement structure and surface roughening'20138,536,618'Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays'20138,539,149'Storage system and communications method'20138,502,246'Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition'20138,481,991'Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations'20138,458,432'Computer system, storage system and method for controlling power supply based on logical partition'20138,449,456'Endoscope'20138,450,192'Growth of planar, non-polar, group-III nitride films'20138,436,265'Keyboard'20138,423,677'Storage system having a channel control function using a plurality of processors'20138,417,882'Storage device and deduplication method'20138,410,499'LED with a current confinement structure aligned with a contact'20138,410,490'LED with current confinement structure and surface roughening'20138,405,128'Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition'20138,402,212'Storage system and management method of its storage medium'20138,400,893'Storage apparatus and estimating method of power consumption for storage apparatus'20138,402,195'Storage system mounted with plurality of processors'20138,372,204'Susceptor for MOCVD reactor'20138,368,523'Collision detection sensor for vehicle'20138,368,109'Light emitting diodes with a p-type surface bonded to a transparent submount to increase light extraction efficiency'20138,368,179'Miscut semipolar optoelectronic device'20138,366,830'Susceptor apparatus for inverted type MOCVD reactor'20138,357,925'Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys'20138,340,087'Storage subsystem'20128,334,151'Method for fabricating a direct wafer bonded optoelectronic device'20128,332,586'Information processing system for measuring the cache effect in a virtual capacity'20128,332,582'Storage system, storage device, and control method thereof'20128,327,032'Storage system having a channel control function using a plurality of processors'20128,321,622'Storage system with multiple controllers and multiple processing paths'20128,312,314'Storage system and control method of storage system'20128,304,790'Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor'20128,299,382'Key switch and keyboard'20128,299,452'Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes'20128,294,166'Transparent light emitting diodes'20128,286,031'Highly reliable storage system and internal network thereof'20128,278,128'Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut'20128,263,424'Opto-electronic and electronic devices using an N-face or M-plane gallium nitride substrate prepared via ammonothermal growth'20128,253,221'Gallium nitride bulk crystals and their growth method'20128,254,423'(Al,Ga,In)N diode laser fabricated at reduced temperature'20128,250,390'Power estimating method and computer system'20128,243,572'Disk controller and storage system'20128,244,955'Storage system and its controlling method'20128,227,820'Semiconductor light-emitting device'20128,227,819'Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes'20128,227,818'Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth'20128,219,747'Storage system and communications method'20128,214,586'Apparatus and method for mirroring data between nonvolatile memory and a hard disk drive'20128,211,723'Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes'20128,209,595'Storage sub-system and method for controlling the same'20128,203,159'Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices'20128,193,079'Method for conductivity control of (Al,In,Ga,B)N'20128,188,458'Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices'20128,183,557'(Al,In,Ga,B)N device structures on a patterned substrate'20128,178,373'Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices'20128,166,270'Storage control apparatus, data management system and data management method for determining storage heirarchy based on a user policy'20128,158,497'Planar nonpolar m-plane group III nitride films grown on miscut substrates'20128,156,279'Storage device and deduplication method'20128,148,713'Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes'20128,148,244'Lateral growth method for defect reduction of semipolar nitride films'20128,133,322'Apparatus for inverted multi-wafer MOCVD fabrication'20128,127,077'Virtual path storage system and control method for the same'20128,124,991'Light emitting diodes with a P-type surface bonded to a transparent submount to increase light extraction efficiency'20128,114,698'High light extraction efficiency nitride based light emitting diode by surface roughening'20128,110,482'Miscut semipolar optoelectronic device'20128,097,481'Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)'20128,095,760'Adjustment number of expanders in storage system'20128,086,789'Flash memory module, storage apparatus using flash memory module as recording medium and address translation table verification method for flash memory module'20118,084,763'Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys'20118,082,389'Apparatus and method for mirroring data between nonvolatile memory and a hard disk drive'20118,080,469'Method for increasing the area of non-polar and semi-polar nitride substrates'20118,053,264'Photoelectrochemical etching of P-type semiconductor heterostructures'20118,051,367'Storage sub-system and method for controlling the same'20118,050,304'Group-III nitride based laser diode and method for fabricating same'20118,044,383'Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes'20118,044,417'Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation'2011RE042770'Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer'20118,022,423'Standing transparent mirrorless light emitting diode'20117,994,527'High light extraction efficiency light emitting diode (LED)'20117,990,823'Storage device and its drive startup method'20117,982,208'Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices'20117,962,704'Storage system of storage hierarchy devices and a method of controlling storage hierarchy devices based on a user policy of I/O performance and power consumption'20117,958,391'Storage system and control method of storage system'20117,956,371'High efficiency light emitting diode (LED)'20117,956,360'Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy'20117,953,927'Allocating clusters to storage partitions in a storage system'20117,953,939'Storage system and method of controlling a storage system'20117,917,668'Disk controller'20117,917,688'Flash memory module, storage apparatus using flash memory module as recording medium, and address translation table verification method for flash memory module'20117,904,746'Information processing system and data recovery method'20117,895,396'Virtual path storage system and control method for the same'20117,877,633'Highly reliable storage system and internal network thereof'20117,868,341'Optical designs for high-efficacy white-light emitting diodes'20117,858,996'Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices'20107,847,280'Nonpolar III-nitride light emitting diodes with long wavelength emission'20107,846,757'Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices'20107,847,293'Growth of reduced dislocation density non-polar gallium nitride'20107,842,527'Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices'20107,839,903'Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers'20107,831,764'Storage system having plural flash memory drives and method for controlling data storage'20107,825,006'Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method'20107,818,495'Storage device and deduplication method'20107,817,626'Storage subsystem'20107,813,400'Group-III nitride based laser diode and method for fabricating same'20107,809,981'Storage system and control method of storage system'20107,781,789'Transparent mirrorless light emitting diode'20107,780,593'Endoscope'20107,769,066'Laser diode and method for fabricating same'20107,768,381'Vehicular collision detection apparatus'20107,768,024'Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth'20107,761,655'Storage system and method of preventing deterioration of write performance in storage system'20107,755,172'Opto-electronic and electronic devices using N-face or M-plane GaN substrate prepared with ammonothermal growth'20107,743,209'Storage system for virtualizing control memory'20107,734,957'Highly reliable storage system and internal network thereof'20107,723,746'Packaging technique for the fabrication of polarized light emitting diodes'20107,719,020'(Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method'20107,709,284'Method for deposition of magnesium doped (Al, In, Ga, B)N layers'20107,704,763'Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface'20107,704,331'Technique for the growth of planar semi-polar gallium nitride'20107,702,823'Disk subsystem monitoring fault'20107,691,658'Method for improved growth of semipolar (Al,In,Ga,B)N'20107,687,293'Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition'20107,687,813'Standing transparent mirrorless light emitting diode'20107,682,944'Pendeo epitaxial structures and devices'20107,672,692'Pointing device having improved operability, its control method and mobile telephone'20107,669,019'Apparatus and method of mirroring data between nonvolatile memory and hard disk'20107,633,488'Pointing device'20097,615,804'Superlattice nitride semiconductor LD device'20097,595,712'Pointing device'20097,587,551'Virtual path storage system and control method for the same'20097,575,947'Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition'20097,574,554'Storage system and data protection method therefor'20097,568,075'Apparatus, system and method for making endurance of storage media'20097,565,508'Allocating clusters to storage partitions in a storage system'20097,550,395'Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte'20097,549,016'Storage control apparatus for selecting storage media based on a user-specified performance requirement'20097,518,159'Packaging technique for the fabrication of polarized light emitting diodes'20097,504,274'Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition'20097,502,013'Pointing device'20097,502,014'Pointing device'20097,496,124'Nitride semiconductor laser device'20097,489,296'Pointing device'20097,480,322'Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser'20097,469,307'Storage system with DMA controller which controls multiplex communication protocol'20087,467,238'Disk controller and storage system'20087,464,221'Storage system, storage device, and control method thereof'20087,442,254'Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer'20087,427,555'Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy'20087,375,383'Gallium nitride based III-V group compound semiconductor device and method of producing the same'20087,365,369'Nitride semiconductor device'20087,350,050'Disk controller with logically partitioning function'20087,338,828'Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)'20087,335,920'LED with current confinement structure and surface roughening'20087,332,365'Method for fabricating group-III nitride devices and devices fabricated using method'20087,312,789'Input device with extendible body'20077,231,469'Disk controller'20077,228,369'Clustered storage system and inter-cluster data communication method'20077,223,998'White, single or multi-color light emitting diodes by recycling guided modes'20077,220,324'Technique for the growth of planar semi-polar gallium nitride'20077,220,658'Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy'20077,211,822'Nitride semiconductor device'20077,208,393'Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy'20077,205,220'Gallium nitride based III-V group compound semiconductor device and method of producing the same'20077,186,302'Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition'20077,166,874'Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor'20077,166,869'Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor'20077,154,128'Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device'20067,142,193'Coordinate input device having rotating bodies capable of rotating in a direction normal to the rotation of a wheel'20067,138,587'Key switch, keyboard and key-switch assembling jig'20067,122,844'Susceptor for MOCVD reactor'20067,091,514'Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices'20067,083,679'Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device'20067,083,996'Nitride semiconductor device and manufacturing method thereof'20067,058,761'Clustering disk controller, its disk control unit and load balancing method of the unit'20067,015,053'Nitride semiconductor laser device'20066,998,690'Gallium nitride based III-V group compound semiconductor device and method of producing the same'20066,996,690'Storage system including multiple control units for increased reliability during a failure'20066,952,197'Pointing device'20056,940,103'Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor device'20056,900,465'Nitride semiconductor light-emitting device'20056,883,064'Disk array controller comprising a plurality of disk array controlling units'20056,849,864'Nitride semiconductor device'20056,835,956'Nitride semiconductor device and manufacturing method thereof'20046,831,629'Pointing device'20046,801,967'Wireless mouse unit, wireless mouse and receiver'20046,791,103'Light-emitting gallium nitride-based compound semiconductor device'20046,756,611'Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device'20046,711,191'Nitride semiconductor laser device'20046,707,446'Pointing device'20046,677,930'Mouse'20046,677,619'Nitride semiconductor device'20046,610,995'Gallium nitride-based III-V group compound semiconductor'20036,601,807'Mounting structure of thermal shield for oil pump'20036,580,099'Nitride semiconductor light-emitting devices'20036,512,344'Control apparatus equipped with back drive'20036,507,041'Gallium nitride-based III-V group compound semiconductor'20036,469,323'Light-emitting gallium nitride-based compound semiconductor device'20026,215,133'Light-emitting gallium nitride-based compound semiconductor device'20016,204,512'Gallium nitride-based III-V group compound semiconductor device and method of producing the same'20016,172,382'Nitride semiconductor light-emitting and light-receiving devices'20016,153,010'Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device'20006,093,965'Gallium nitride-based III-V group compound semiconductor'20006,078,063'Light-emitting gallium nitride-based compound semiconductor device'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1990–2019Patents assigned to NAKAMURA SHUJI (115)· patent assignee history
1994–2013Based in Anan-shi, JP· patent location history
2004–2020Based in Santa Barbara, CA, US· patent location history
2004–2019Based in Tokyo, JP· patent location history
2005–2016Patents assigned to HITACHI LTD (65)· patent assignee history
2006–2020Patents assigned to UNIV CALIFORNIA (141)· patent assignee history
2006–2016Based in Yokohama, JP· patent location history
2009–2014Based in Machida, JP· patent location history
2011–2015Patents assigned to DENBAARS STEVEN P (58)· patent assignee history
2011–2015Patents assigned to SPECK JAMES S (40)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV CALIFORNIA | 141 | 2006–2020 |
| NAKAMURA SHUJIself | 115 | 1990–2019 |
| HITACHI LTD | 65 | 2005–2016 |
| DENBAARS STEVEN P | 58 | 2011–2015 |
| SPECK JAMES S | 40 | 2011–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Santa Barbara, California, US | 158 | 2004–2020 |
| Anan-shi, JP | 42 | 1994–2013 |
| Machida, JP | 35 | 2009–2014 |
| Yokohama, JP | 20 | 2006–2016 |
| Tokyo, JP | 14 | 2004–2019 |