Inventor

KUAN-TING PAN

Inventor
TW

Overview

81→
Patents
2021–2026
Patent span
Electricity
Primary field (CPC H)

Patents· 81 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices33%
H01LSemiconductor devices28%
B82YSpecific uses or applications of nanostructures18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
H10BElectronic memory devices1%
PatentTitleYear
12,593,475Field effect transistor with isolation structure and method202612,581,704Semiconductor device structure and method for forming the same202612,563,816Method for forming sidewall spacers disposed above mask layer and semiconductor devices fabricated thereof202612,557,317Semiconductor devices with fin-top hard mask and methods for fabrication thereof202612,520,518Semiconductor device structure and methods of forming the same202612,477,802Structure of isolation feature of semiconductor device structure202512,471,316Semiconductor device and manufacturing method thereof202512,464,814Method of manufacturing semiconductor devices and semiconductor devices202512,457,798Dielectric liner for field effect transistors202512,453,127Methods of manufacturing semiconductor devices and semiconductor devices202512,439,680Multi-gate device and related methods202512,419,094Semiconductor device with trimmed channel region and method of making the same202512,396,246Semiconductor integrated circuit including gate-all-around FETs with nanosheet channels and Fin-like FETs202512,376,366Semiconductor device and method of manufacturing the same202512,376,354Semiconductor and method for manufacturing the same202512,369,366Convergent fin and nanostructure transistor structure and method202512,349,407Method for manufacturing semiconductor structure with dielectric feature202512,349,456Semiconductor device structure and methods of forming the same202512,349,378Semiconductor devices with Fin-top hard mask and methods for fabrication thereof202512,324,225Self-aligned structure for semiconductor devices202512,322,653Self-aligned metal gate for multigate device and method of forming thereof202512,317,528Gate isolation feature and manufacturing method thereof202512,300,732Gate all around transistor with dual inner spacers202512,272,690Gate isolation for multigate device202512,237,405Semiconductor devices and methods of manufacturing thereof202512,199,097Seam free isolation structures and method for making the same202512,165,926FinFET device structure having dielectric features between a plurality of gate electrodes and methods of forming the same202412,148,815Fin field effect transistor device structure202412,142,692Semiconductor device with isolation structure202412,107,006Method for manufacturing semiconductor structure with dielectric feature202412,107,153Semiconductor device and manufacturing method thereof202412,100,770Field effect transistor with gate isolation structure and method202412,087,636Semiconductor device including a FinFET structure and method for fabricating the same202412,087,768Semiconductor device structure and method for forming the same202412,080,776Field effect transistor with fin isolation structure and method202412,074,164FinFET pitch scaling202412,068,320Gate isolation for multigate device202412,057,507Method for manufacturing semiconductor device structure202412,051,693Method for manufacturing semiconductor structure with isolation strips202412,034,062Semiconductor device structure and method for forming the same202412,021,136Gate isolation feature and manufacturing method thereof202412,014,960Etch profile control of polysilicon structures of semiconductor devices202411,996,332Semiconductor device and method of manufacturing the same202411,990,374Method for forming sidewall spacers and semiconductor devices fabricated thereof202411,990,471Gate isolation for multigate device202411,961,763Self-aligned metal gate for multigate device and method of forming thereof202411,948,973Gate-all-around field-effect transistor device202411,929,287Dielectric liner for field effect transistors202411,916,122Gate all around transistor with dual inner spacers202411,854,908Multi-gate device and related methods202311,837,504Self-aligned structure for semiconductor devices202311,799,019Gate isolation feature and manufacturing method thereof202311,757,021Semiconductor devices with fin-top hard mask and methods for fabrication thereof202311,742,428Formation method of semiconductor device with isolation structure202311,735,591Semiconductor devices with dielectric fins and method for forming the same202311,735,649Method for forming fin field effect transistor (FinFET) with a liner layer202311,735,482Semiconductor device structure and methods of forming the same202311,688,809Semiconductor device structure202311,676,864Semiconductor device structure and methods of forming the same202311,637,102Gate isolation for multigate device202311,626,402Semiconductor device structure202311,626,509Semiconductor device and manufacturing method thereof202311,621,195Semiconductor device and method of manufacturing the same202311,616,062Gate isolation for multigate device202311,581,437Semiconductor device structure and methods of forming the same202311,569,234Semiconductor device structure and methods of forming the same202311,563,106Formation method of isolation feature of semiconductor device structure202311,532,725Method for forming sidewall spacers and semiconductor devices fabricated thereof202211,532,732Multi-gate device and method of fabrication thereof202211,527,533FinFET pitch scaling202211,502,187Semiconductor device structure and method for forming the same202211,495,677Semiconductor devices and methods of manufacturing thereof202211,456,368Semiconductor device structure with hard mask layer over fin structure and method for forming the same202211,355,398Semiconductor device structure and methods of forming the same202211,355,396Method of forming a semiconductor structure including laterally etching semiconductor material in fin recess region and depositing metal gate therein202211,349,016Fin field effect transistor (FinFET) with a liner layer202211,329,165Structure and formation method of semiconductor device with isolation structure202211,328,963Multi-gate device and related methods202211,302,580Nanosheet thickness202211,211,381Semiconductor device structure and method for forming the same202111,164,866Semiconductor structure and method for manufacturing the same2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (81)· patent assignee history
2021–2026Based in TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD812021–2026
Locations
LocationPatentsSpan
TW812021–2026