Inventor
Wim Deweerd
Inventor
San Jose, CA, US
Overview
Patents· 41 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices39%
H10BElectronic memory devices18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H01LSemiconductor devices9%
C23CCoating metallic material4%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices4%
H01GCapacitors3%
H10NElectric solid-state devices not otherwise provided for3%
Y10TTechnical subjects covered by former us classification3%
H10KOrganic electric solid-state devices2%
PatentTitleYear
9,224,878'High work function, manufacturable top electrode'20159,178,010'Adsorption site blocking method for co-doping ALD films'20158,975,633'Molybdenum oxide top electrode for DRAM capacitors'20158,940,463'Method and apparatus for EUV mask having diffusion barrier'20158,936,889'Method and apparatus for EUV mask having diffusion barrier'20158,906,812'Wet etch and clean chemistries for MoOx'20148,878,269'Band gap improvement in DRAM capacitors'20148,853,049'Single-sided non-noble metal electrode hybrid MIM stack for DRAM devices'20148,847,397'High work function, manufacturable top electrode'20148,836,002'Method for fabricating a DRAM capacitor'20148,813,325'Method for fabricating a DRAM capacitor'20148,815,677'Method of processing MIM capacitors to reduce leakage current'20148,772,123'Band gap improvement in DRAM capacitors'20148,765,570'Manufacturable high-k DRAM MIM capacitor structure'20148,765,569'Molybdenum oxide top electrode for DRAM capacitors'20148,741,712'Leakage reduction in DRAM MIM capacitors'20148,722,504'Interfacial layer for DRAM capacitor'20148,679,939'Manufacturable high-k DRAM MIM capacitor structure'20148,654,560'Variable resistance memory with a select device'20148,652,927'Integration of non-noble DRAM electrode'20148,647,960'Anneal to minimize leakage current in DRAM capacitor'20148,647,943'Enhanced non-noble electrode layers for DRAM capacitor cell'20148,581,318'Enhanced non-noble electrode layers for DRAM capacitor cell'20138,574,983'Method for fabricating a DRAM capacitor having increased thermal and chemical stability'20138,574,999'Blocking layers for leakage current reduction in DRAM devices'20138,569,818'Blocking layers for leakage current reduction in DRAM devices'20138,563,392'Method of forming an ALD material'20138,546,236'High performance dielectric stack for DRAM capacitor'20138,541,282'Blocking layers for leakage current reduction in DRAM devices'20138,542,523'Method for fabricating a DRAM capacitor having increased thermal and chemical stability'20138,541,283'High performance dielectric stack for DRAM capacitor'20138,541,868'Top electrode templating for DRAM capacitor'20138,530,348'Integration of non-noble DRAM electrode'20138,475,977'Protective cap for extreme ultraviolet lithography masks'20138,476,141'High performance dielectric stack for DRAM capacitor'20138,440,537'Adsorption site blocking method for co-doping ALD films'20138,435,854'Top electrode templating for DRAM capacitor'20138,426,085'Method and apparatus for EUV mask having diffusion barrier'20138,415,227'High performance dielectric stack for DRAM capacitor'20138,211,812'Method for fabricating a high-K dielectric layer'20127,939,815'Forming a carbon passivated ovonic threshold switch'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2015Based in San Jose, CA, US· patent location history
2012–2014Patents assigned to DEWEERD WIM (17)· patent assignee history
2013–2015Patents assigned to INTERMOLECULAR INC (39)· patent assignee history
2013–2015Patents assigned to ELPIDA MEMORY INC (25)· patent assignee history
2013–2014Patents assigned to ODE HIROYUKI (17)· patent assignee history
2013–2014Patents assigned to CHEN HANHONG (11)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INTERMOLECULAR INC | 39 | 2013–2015 |
| ELPIDA MEMORY INC | 25 | 2013–2015 |
| DEWEERD WIMself | 17 | 2012–2014 |
| ODE HIROYUKI | 17 | 2013–2014 |
| CHEN HANHONG | 11 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 41 | 2011–2015 |