Inventor
Minghao Jin
Inventor
Villach, AT
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices33%
H10DInorganic electric semiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H03KPulse technique6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
PatentTitleYear
10,199,456Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trench20199,496,339'Semiconductor device comprising trench structures'20169,478,639'Electrode-aligned selective epitaxy method for vertical power devices'20169,443,973'Semiconductor device with charge compensation region underneath gate trench'20169,425,788'Current sensors and methods of improving accuracy thereof'20169,324,823'Semiconductor device having a tapered gate structure and method'2016Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2016–2019Patents assigned to INFINEON TECHNOLOGIES AUSTRIA AG (5)· patent assignee history
2016Patents assigned to INFINEON TECHNOLOGIES AUSTRIA (1)· patent assignee history
2016–2019Based in Villach, AT· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AUSTRIA AG | 5 | 2016–2019 |
| INFINEON TECHNOLOGIES AUSTRIA | 1 | 2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Villach, AT | 6 | 2016–2019 |