Inventor
Yaxin Wang
Inventor
Fremont, CA, US
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H01JElectric discharge tubes or discharge lamps13%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
B05DProcesses for applying fluent materials to surfaces, in general5%
H01LSemiconductor devices5%
H10DInorganic electric semiconductor devices5%
B08BCleaning in general2%
C03CChemical composition of glasses, glazes or vitreous enamels2%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds2%
PatentTitleYear
11,099,877Predictively provisioning cloud computing resources for virtual machines20219,818,617'Method of electroless plating using a solution with at least two borane containing reducing agents'20179,551,074'Electroless plating solution with at least two borane containing reducing agents'20179,142,416'Process to reduce nodule formation in electroless plating'20158,603,913'Porous dielectrics K value restoration by thermal treatment and or solvent treatment'20137,910,476'Adhesion and minimizing oxidation on electroless CO alloy films for integration with low K inter-metal dielectric and etch stop'20117,542,132'Raman spectroscopy as integrated chemical metrology'20097,473,655'Method for silicon based dielectric chemical vapor deposition'20097,413,627'Deposition chamber and method for depositing low dielectric constant films'20086,833,052'Deposition chamber and method for depositing low dielectric constant films'20046,814,814'Cleaning residues from surfaces in a chamber by sputtering sacrificial substrates'20046,624,064'Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application'20036,589,610'Deposition chamber and method for depositing low dielectric constant films'20036,511,923'Deposition of stable dielectric films'20036,479,100'CVD ruthenium seed for CVD ruthenium deposition'20026,475,854'Method of forming metal electrodes'20026,440,495'Chemical vapor deposition of ruthenium films for metal electrode applications'20026,416,823'Deposition chamber and method for depositing low dielectric constant films'20026,413,871'Nitrogen treatment of polished halogen-doped silicon glass'20026,383,954'Process gas distribution for forming stable fluorine-doped silicate glass and other films'20026,323,119'CVD deposition method to improve adhesion of F-containing dielectric metal lines for VLSI application'20016,211,065'Method of depositing and amorphous fluorocarbon film using HDP-CVD'20016,070,551'Deposition chamber and method for depositing low dielectric constant films'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2011Patents assigned to APPLIED MATERIALS INC (18)· patent assignee history
2000–2008Based in San Jose, CA, US· patent location history
2001–2017Based in Fremont, CA, US· patent location history
2013–2017Patents assigned to LAM RES CORP (4)· patent assignee history
2021Patents assigned to IBM (1)· patent assignee history
2021Based in Beijing, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 18 | 2000–2011 |
| LAM RES CORP | 4 | 2013–2017 |
| IBM | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Fremont, California, US | 16 | 2001–2017 |
| San Jose, California, US | 6 | 2000–2008 |
| Beijing, CN | 1 | 2021 |