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Inventor

Yasufumi Aihara

Inventor
Nagoya, JP

Overview

18→
Patents
1994–2013
Patent span
Chemistry
Primary field (CPC C)

Patents· 18 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C04Bprimary
C04BLime, magnesia26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
C23CCoating metallic material14%
Y10TTechnical subjects covered by former us classification14%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form5%
G03BApparatus or arrangements for taking photographs or for projecting or viewing them2%
H01JElectric discharge tubes or discharge lamps2%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy2%
H02NElectric machines not otherwise provided for2%
H04NPictorial communication, e.g. television2%
PatentTitleYear
8,361,271'Ceramic-metal bonded body and method of producing the same'20138,129,016'Substrate supporting member'20127,763,831'Heating device'20107,582,367'Ceramic member and manufacturing method for the same'20097,576,967'Electrostatic chuck'20097,442,450'Yttria sintered body, electrostatic chuck, and manufacturing method of yttria sintered body'20087,403,386'Electrostatic chuck'20087,375,046'Yttria sintered body, ceramic member using yttria sintered body, and manufacturing method of yttria sintered body'20086,416,889'Anti-corrosion ceramic member'20026,406,799'Method of producing anti-corrosion member and anti-corrosion member'20026,365,460'Production of silicon carbide bodies'20026,258,440'Ceramic parts and a producing process thereof'20016,200,516'Production of corrosion-resistant ceramic members'20016,099,794'Process for production of silicon nitride material'20006,063,514'Gas-tight article and a producing process thereof'20006,054,187'Method of manufacturing a boron carbide film on a substrate'20005,945,363'Silicon nitride sintered material'19995,332,598'Process for the production of lanthanum chromite films by plasma spraying'1994

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1994–2013Patents assigned to NGK INSULATORS LTD (18)· patent assignee history
1994–2013Based in Nagoya, JP· patent location history
2002Based in Sunneyvale, CA, US· patent location history
2002Based in CA, US· patent location history
2012–2013Patents assigned to AIHARA YASUFUMI (2)· patent assignee history
2012Patents assigned to FUJII TOMOYUKI (1)· patent assignee history
2012Patents assigned to KAWAJIRI TETSUYA (1)· patent assignee history
2013Patents assigned to OHBA KAZUMA (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NGK INSULATORS LTD181994–2013
AIHARA YASUFUMIself22012–2013
FUJII TOMOYUKI12012
KAWAJIRI TETSUYA12012
OHBA KAZUMA12013
Locations
LocationPatentsSpan
Nagoya, JP151994–2013
Sunneyvale, California, US22002
California, US12002