Inventor
Jan Willem Maes
Inventor
Wilrijk, BE
Overview
Patents· 72 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H01LSemiconductor devices19%
H10DInorganic electric semiconductor devices18%
C23CCoating metallic material10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
H10BElectronic memory devices3%
G06FElectric digital data processing2%
H10KOrganic electric solid-state devices2%
C23FNon-mechanical removal of metallic material from surface1%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices1%
PatentTitleYear
11,101,370Method of forming a germanium oxynitride film202111,094,535Selective passivation and selective deposition202111,022,879Method of forming an enhanced unexposed photoresist layer202110,953,602Systems and methods for customization of objects in additive manufacturing202110,923,361Deposition of organic films202110,903,113Selective deposition of aluminum and nitrogen containing material202110,854,444Sulfur-containing thin films202010,847,361Selective deposition of aluminum and nitrogen containing material202010,793,946Reaction chamber passivation and selective deposition of metallic films202010,741,394Combined anneal and selective deposition process202010,699,899Atomic layer deposition of antimony oxide films202010,665,452Source/drain performance through conformal solid state doping202010,643,904Methods for forming a semiconductor device and related semiconductor device structures202010,607,895Method for forming a semiconductor device structure comprising a gate fill metal202010,566,185Selective deposition of aluminum and nitrogen containing material202010,553,424Sulfur-containing thin films202010,553,482Selective deposition of aluminum and nitrogen containing material202010,551,741Method of forming a directed self-assembled layer on a substrate202010,513,772Process for passivating dielectric films201910,490,475Methods for semiconductor passivation by nitridation after oxide removal201910,480,064Reaction chamber passivation and selective deposition of metallic films201910,453,701Deposition of organic films201910,373,328Generation of a digital 3D model of an object based on predicting a shape of the object201910,367,080Method of forming a germanium oxynitride film201910,361,201Semiconductor structure and device formed using selective epitaxial process201910,331,111Systems and methods for customization of objects in additive manufacturing201910,204,782Combined anneal and selective deposition process201910,199,213Sulfur-containing thin films201910,141,189Methods for forming semiconductors by diffusion201810,121,699Selective deposition of aluminum and nitrogen containing material201810,056,249Atomic layer deposition of antimony oxide films201810,055,536Systems and methods for forming and utilizing bending maps for object design201810,041,166Reaction chamber passivation and selective deposition of metallic films201810,043,277Prediction of patient-specific structure based on statistical shape model201810,032,628Source/drain performance through conformal solid state doping20189,916,980'Method of forming a structure on a substrate'20189,873,942Methods of vapor deposition with multiple vapor sources20189,803,277'Reaction chamber passivation and selective deposition of metallic films'20179,741,815'Metal selenide and metal telluride thin films for semiconductor device applications'20179,721,786'Sulfur-containing thin films'20179,711,396'Method for forming metal chalcogenide thin films on a semiconductor device'20179,711,350'Methods for semiconductor passivation by nitridation'20179,583,348'Silane and borane treatments for titanium carbide films'20179,553,148'Method of making a wire-based semiconductor device'20179,552,979'Cyclic aluminum nitride deposition in a batch reactor'20179,520,562'Method of making a resistive random access memory'20169,514,934'Atomic layer deposition of antimony oxide films'20169,478,419'Sulfur-containing thin films'20169,472,757'Method of making a resistive random access memory device'20169,461,134'Method for forming source/drain contact structure with chalcogen passivation'20169,385,164'Method of making a resistive random access memory device with metal-doped resistive switching layer'20169,245,742'Sulfur-containing thin films'20169,238,865'Multiple vapor sources for vapor deposition'20169,240,412'Semiconductor structure and device and methods of forming same using selective epitaxial process'20169,236,247'Silane and borane treatments for titanium carbide films'20169,136,180'Process for depositing electrode with high effective work function'20159,117,773'High concentration water pulses for atomic layer deposition'20159,012,278'Method of making a wire-based semiconductor device'20159,006,112'Atomic layer deposition of antimony oxide films'20158,956,939'Method of making a resistive random access memory device'20158,841,182'Silane and borane treatments for titanium carbide films'20148,399,344'Method for adjusting the threshold voltage of a gate stack of a PMOS device'20138,334,218'Method of forming non-conformal layers'20127,927,933'Method to enhance the initiation of film growth'20117,795,160'ALD of metal silicate films'20107,629,267'High stress nitride film and method for formation thereof'20097,629,270'Remote plasma activated nitridation'20097,608,549'Method of forming non-conformal layers'20097,465,626'Method for forming a high-k dielectric stack'20087,323,422'Dielectric layers and methods of forming the same'20086,884,317'Method and installation for etching a substrate'20056,818,517'Methods of depositing two or more layers on a substrate in situ'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2015Patents assigned to ASM INT (7)· patent assignee history
2004–2021Based in Wilrijk, BE· patent location history
2008–2015Patents assigned to ASM INC (6)· patent assignee history
2008Based in Hevelee, BE· patent location history
2012–2019Patents assigned to MAES JAN WILLEM (6)· patent assignee history
2013Based in Almere, NL· patent location history
2014–2021Patents assigned to ASM IP HOLDING BV (50)· patent assignee history
2016–2021Based in Leuven, BE· patent location history
2018–2021Patents assigned to MAT NV (5)· patent assignee history
2018Based in Herselt, BE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ASM IP HOLDING BV | 50 | 2014–2021 |
| ASM INT | 7 | 2004–2015 |
| ASM INC | 6 | 2008–2015 |
| MAES JAN WILLEMself | 6 | 2012–2019 |
| MAT NV | 5 | 2018–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Wilrijk, BE | 62 | 2004–2021 |
| Leuven, BE | 6 | 2016–2021 |
| Herselt, BE | 1 | 2018 |
| Almere, NL | 1 | 2013 |
| Hevelee, BE | 1 | 2008 |