Inventor
FENG-YI CHANG
Inventor
TW
Overview
Patents· 13 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices26%
H01LSemiconductor devices22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10DInorganic electric semiconductor devices16%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
PatentTitleYear
12,272,646Semiconductor memory device202511,943,909Semiconductor memory device202411,769,727Semiconductor memory device202311,721,552Semiconductor device202311,676,815Patterned structure202311,653,491Contacts and method of manufacturing the same202311,632,887Semiconductor memory device having a multilayer dielectric structure with a retracted sidewall below a bit line202311,545,547Method of forming semiconductor device202311,367,725Buried word line of a dynamic random access memory and method for fabricating the same202211,289,489Capacitor structure202211,244,948Semiconductor device and method of forming the same202211,244,829Semiconductor device and method of forming the same202211,139,243Semiconductor memory device2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD (13)· patent assignee history
2021–2025Patents assigned to UNITED MICROELECTRONICS CORP (13)· patent assignee history
2021–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD | 13 | 2021–2025 |
| UNITED MICROELECTRONICS CORP | 13 | 2021–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 13 | 2021–2025 |