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Inventor

Tzong-Liang Tsai

Inventor
Taichung, TW

Overview

60→
Patents
2002–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 60 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers29%
H01LSemiconductor devices14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
C09KMaterials for miscellaneous applications, not provided for elsewhere7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
H10DInorganic electric semiconductor devices5%
F21YIndexing scheme associated with subclasses f21k, f21l, f21s and f21v, relating to the form or the kind of the light sources or of the colour of the light emitted3%
G02BOptical elements, systems or apparatus3%
B82YSpecific uses or applications of nanostructures2%
C30BSingle-crystal growth2%
PatentTitleYear
11,102,439Image sensor employing avalanche diode and pixel circuit and operating method thereof202111,011,385CMP-friendly coatings for planar recessing or removing of variable-height layers202111,004,691Mechanism for manufacturing semiconductor device202111,004,794Partial barrier free vias for cobalt-based interconnects and methods of fabrication thereof202110,998,239Fin isolation structure for FinFET and method of forming the same202110,964,549Wafer polishing with separated chemical reaction and mechanical polishing202110,964,542Selective high-K formation in gate-last process202110,920,105Materials and methods for chemical mechanical polishing of ruthenium-containing materials202110,816,716Application of quantum dot composite material202010,808,171Infrared emitting fluoride phosphor and infrared light emitting device202010,808,172Perovskite luminescent nanocrystal, light emitting device, and manufacturing method for perovskite luminescent nanocrystal202010,497,840Wavelength-converting film and light emitting device and display device using the same201910,436,973Quantum dot composite material and manufacturing method and application thereof201910,386,629Light-enhancement device, and appliance having the same201910,351,766Phosphor, fabricating method thereof, method for regulating crystal phase thereof, and method for changing crystal phase hereof201910,312,408Light emitting diode chip scale packaging structure and direct type backlight module201910,141,476Light emitting diode chip scale packaging structure201810,040,994Phosphor, fabricating method thereof, and light-emitting device and backlight module employing the same201810,023,794Fluoride phosphor including sheet-like crystal and manufacturing method and application thereof201810,020,430Phosphor with preferred orientation, fabricating method thereof, and light-emitting element package structure employing the same20189,966,413Light-emitting diode module and lamp using the same20189,966,505Light emitting structure, light device and backlight module20189,879,178'Fluoride phosphor, fabricating method thereof, and light-emitting apparatus and backlight module employing the same'20189,732,940'Lighting apparatus and wavelength converting apparatus thereof'20179,318,676'Light emitting device and methods for forming the same'20169,306,118'Method of treating substrate'20169,093,613'Electrode structure and light emitting diode structure having the same'20158,659,045'Light emitting device and methods for forming the same'20148,362,505'Optical device and the forming method thereof'20138,288,181'Light emitting diode and fabricating method thereof'20128,247,822'Semiconductor light-emitting device'20128,247,837'Light-emitting diode with high lighting efficiency'20128,124,989'Light optoelectronic device and forming method thereof'20128,013,322'Light-emitting diode device with a double-layer contact structure and a fabrication method thereof'20117,999,273'Light emitting device having pillar structure with roughness surface and the forming method thereof'20117,973,326'Semiconductor structure combination for epitaxy of semiconductor optoelectronic device'20117,923,744'Semiconductor light-emitting device'20117,915,605'LED packaged structure and applications of LED as light source'20117,804,104'Light-emitting diode with high lighting efficiency'20107,768,027'Semiconductor light-emitting device'20107,768,022'Light emitting diode and fabricating method thereof'20107,745,837'Semiconductor light-emitting device with high light-extraction efficiency and method for fabricating the same'20107,737,453'Light emitting diode structure'20107,659,557'Semiconductor light-emitting device and method of fabricating the same'20107,652,302'Method of making light emitting diode'20107,498,607'Epi-structure with uneven multi-quantum well and the method thereof'20097,498,185'Light emitting diode and method making the same'20097,355,209'Light emitting diode and method making the same'20087,067,340'Flip-chip light emitting diode and fabricating method thereof'20067,012,281'Light emitting diode device and manufacturing method'20066,921,924'Semiconductor light-emitting device'20056,894,323'Group III nitride semiconductor device and its method of manufacture'20056,781,160'Semiconductor light emitting device and method for manufacturing the same'20046,774,410'Epitaxial growth of nitride semiconductor device'20046,544,868'Method of manufacturing light emitting diode with low-receptivity p-type impurity layers formed by microwave treatment'20036,504,183'Epitaxial growth of nitride semiconductor device'20036,462,357'Epitaxial growth of nitride compound semiconductor'20026,441,403'Semiconductor device with roughened surface increasing external quantum efficiency'20026,429,102'Method of manufacturing low resistivity p-type compound semiconductor material'20026,399,408'Process for producing light emitting device'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2005Patents assigned to UNITED EPITAXY CO LTD (8)· patent assignee history
2002–2021Based in Hsinchu, TW· patent location history
2006–2012Patents assigned to EPISTAR CORP (7)· patent assignee history
2009–2016Patents assigned to HUGA OPTOTECH INC (18)· patent assignee history
2009–2020Based in Taichung, TW· patent location history
2015–2020Patents assigned to LEXTAR ELECTRONICS CORP (17)· patent assignee history
2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (7)· patent assignee history
2021Based in Changhua County, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HUGA OPTOTECH INC182009–2016
LEXTAR ELECTRONICS CORP172015–2020
UNITED EPITAXY CO LTD82002–2005
EPISTAR CORP72006–2012
TAIWAN SEMICONDUCTOR MFG CO LTD72021
Locations
LocationPatentsSpan
Taichung, TW302009–2020
Hsinchu, TW292002–2021
Changhua County, TW12021