Inventor
Weidong Tian
Inventor
Dallas, TX, US
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices36%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H01LSemiconductor devices13%
H10BElectronic memory devices9%
H10NElectric solid-state devices not otherwise provided for5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
10,679,935Structure and method for improving high voltage breakdown reliability of a microelectronic device202010,418,320Structure and method for improving high voltage breakdown reliability of a microelectronic device201910,211,303Low cost flash memory fabrication flow based on metal gate process201910,109,574Structure and method for improving high voltage breakdown reliability of a microelectronic device20189,818,740'Method of improving bipolar device signal to noise performance by reducing the effect of oxide interface trapping centers'20179,548,298'Method of improving bipolar device signal to noise performance by reducing the effect of oxide interface trapping centers'20179,431,253'Fabrication flow based on metal gate process for making low cost flash memory'20168,679,929'On current in one-time-programmable memory cells'20148,664,706'Current in one-time-programmable memory cells'20148,609,501'Fluorine implant under isolation dielectric structures to improve bipolar transistor performance and matching'20138,546,222'Electrically erasable programmable non-volatile memory'20138,373,215'Zero temperature coefficient capacitor'20138,110,414'Forming integrated circuit devices with metal-insulator-metal capacitors using selective etch of top electrodes'20127,671,445'Versatile system for charge dissipation in the formation of semiconductor device structures'20107,592,252'Versatile system for charge dissipation in the formation of semiconductor device structures'20097,498,219'Methods for reducing capacitor dielectric absorption and voltage coefficient'20097,119,444'Versatile system for charge dissipation in the formation of semiconductor device structures'20067,045,418'Semiconductor device including a dielectric layer having a gettering material located therein and a method of manufacture therefor'20066,794,700'Capacitor having a dielectric layer including a group 17 element'20046,706,635'Innovative method to build a high precision analog capacitor with low voltage coefficient and hysteresis'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2020Patents assigned to TEXAS INSTRUMENTS INC (20)· patent assignee history
2004–2020Based in Dallas, TX, US· patent location history
2012–2014Patents assigned to TIAN WEIDONG (5)· patent assignee history
2012Patents assigned to CATHEY JR MARSHALL O (1)· patent assignee history
2013Patents assigned to AGGARWAL RAJNI J (1)· patent assignee history
2014Patents assigned to MITCHELL ALLAN T (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TEXAS INSTRUMENTS INC | 20 | 2004–2020 |
| TIAN WEIDONGself | 5 | 2012–2014 |
| MITCHELL ALLAN T | 2 | 2014 |
| AGGARWAL RAJNI J | 1 | 2013 |
| CATHEY JR MARSHALL O | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Dallas, Texas, US | 20 | 2004–2020 |