LexDanaLexDanabeta
Inventor

Gordon Sim

Inventor
Sandy, UT, US

Overview

3→
Patents
2010–2013
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices50%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1050%
PatentTitleYear
8,343,852'Method and structure for dividing a substrate into individual devices'20137,951,688'Method and structure for dividing a substrate into individual devices'20117,667,265'Varying mesa dimensions in high cell density trench MOSFET'2010

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2010–2013Patents assigned to FAIRCHILD SEMICONDUCTOR (3)· patent assignee history
2010–2013Based in Sandy, UT, US· patent location history
2013Patents assigned to KIM SUKU (1)· patent assignee history
2013Patents assigned to LI MINHUA (1)· patent assignee history
2013Patents assigned to MURPHY JAMES J (1)· patent assignee history
2013Patents assigned to REYNOLDS MATTHEW (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
FAIRCHILD SEMICONDUCTOR32010–2013
KIM SUKU12013
LI MINHUA12013
MURPHY JAMES J12013
REYNOLDS MATTHEW12013
Locations
LocationPatentsSpan
Sandy, UT, US32010–2013