Inventor

Kimihiro Matsuse

Inventor

Inagi, JP

Overview

1990–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 18 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary

C23CCoating metallic material23%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%

H10DInorganic electric semiconductor devices19%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%

H01JElectric discharge tubes or discharge lamps4%

H10BElectronic memory devices4%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%

G01DMeasuring not specially adapted for a specific variable2%

G01KMeasuring temperature2%

G06FElectric digital data processing2%

PatentTitleYear

11,114,321Apparatus and method for real-time sensing of properties in industrial manufacturing equipment2021 7,829,144'Method of forming a metal film for electrode'2010 7,153,773'TiSiN film forming method, diffusion barrier TiSiN film, semiconductor device, method of fabricating the same and TiSiN film forming system'2006 6,919,273'Method for forming TiSiN film, diffusion preventive film comprising TiSiN film, semiconductor device and its production method, and apparatus for forming TiSiN film'2005 6,861,356'Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film'2005 6,838,376'Method of forming semiconductor wiring structures'2005 6,576,062'Film forming apparatus and film forming method'2003 6,489,208'Method of forming a laminated structure to enhance metal silicide adhesion on polycrystalline silicon'2002 6,454,909'Method and apparatus for forming a film on an object to be processed'2002 6,404,021'Laminated structure and a method of forming the same'2002 6,251,191'Processing apparatus and processing system'2001 6,251,188'Apparatus for forming laminated thin films or layers'2001 6,245,673'Method of forming tungsten silicide film'2001 6,022,586'Method and apparatus for forming laminated thin films or layers'2000 5,997,651'Heat treatment apparatus'1999 5,951,772'Vacuum processing apparatus'1999 5,647,945'Vacuum processing apparatus'1997 4,913,790'Treating method'1990

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990–2021Patents assigned to TOKYO ELECTRON LTD (18)· patent assignee history

1990Based in Yokohama, JP· patent location history

1997–2021Based in Tokyo, JP· patent location history

1999–2002Based in Tama, JP· patent location history

2001–2010Based in Inagi, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TOKYO ELECTRON LTD	18	1990–2021

Locations

Location	Patents	Span
Inagi, JP	8	2001–2010
Tama, JP	5	1999–2002
Tokyo, JP	4	1997–2021
Yokohama, JP	1	1990